Results 191 to 200 of about 1,171,815 (343)

Finite Element Analysis of Peri-Implant Stress in Maxillary All-on-Four Rehabilitation: Effects of Posterior Implant Angulation and Loading Protocol. [PDF]

open access: yesMaterials (Basel)
Aristizábal-Hoyos JA   +8 more
europepmc   +1 more source

Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate that boron‐vacancy (VB${\rm V}_{\rm B}$) centers in hexagonal boron nitride (hBN) enable quantitative strain sensing with sub‐micrometer resolution. Using this approach under continuously tunable in‐plane stress, we precisely quantify strain‐induced shifts of the E2g${\rm E}_{2{\rm g}}$ Raman mode in multilayer hBN, establishing VB${\rm ...
Zhao Mu   +7 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Thermo‐Mechanically Recyclable Smart Textiles from Circularly Knitted Liquid Crystal Elastomer Fibers

open access: yesAdvanced Functional Materials, EarlyView.
Reprogrammable multi‐material smart textiles knitted from liquid crystal elastomer fibers undergo 2D and 3D deformation under thermal and photo stimuli. Circularly knitted tubular structures reversibly contract in radial and axial directions, enabling autonomous climbing, liquid release, and micro pumping.
Xue Wan   +8 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Finite Differences

open access: yes
Finite differences are essential for approximating derivatives and solving numerical problems in calculus, particularly in interpolation and differential equations. This chapter outlines three fundamental types: forward, backward, and central differences, each with its respective operators and formulas.
openaire   +1 more source

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