Results 141 to 150 of about 96,100 (268)
Combined Nodal Method and Finite Volume Method for Flow in Porous Media
, 2010 Abdeslam Elakkad +2 more
openalex +2 more sources
A 4th-Order Accurate Finite Volume Method for Ideal Mhd and Rmhd Based on Pointwise Reconstructions
, 2023 Vittoria Berta +3 more
openalex +1 more source
Advanced Functional Materials, EarlyView.In situ monitoring of bulk photoalignment reveals how molecular weight, azobenzene content, cooling rate, and thickness govern ordering in main‐chain liquid crystalline polymers. Optimized copolymers exceed conventional thickness limits, maintaining stable alignment up to 130 µm with high energy efficiency and reversible optical patterning.
Jaechul Ju +3 more
wiley +1 more source
Calculation Simulation of Equivalent Thermomechanical Properties of Dispersion Nuclear Fuel. [PDF]
Materials (Basel)Yu H, Cong T, Zhang J.
europepmc +1 more source
Fundamental approach to anisotropic heat conduction using the element-based finite volume method
, 2017 Dani Prestini +3 more
openalex +2 more sources
A Quasi‐3D Numerical Model for Grout Injection in a Parallel Fracture Based on Finite Volume Method [PDF]
, 2019 Xiaolong Li +5 more
openalex +1 more source
Melt Grafting of Geometry‐Tailored Voltage Stabilizers for High‐Performance Polypropylene Insulation
Advanced Functional Materials, EarlyView.A scalable one‐step melt grafting strategy is developed to enhance the dielectric properties of isotactic polypropylene by covalently incorporating thermally stable aromatic voltage stabilizers. This solvent‐free approach improves volume resistivity and DC breakdown strength through deep trap formation and charge localization, offering a sustainable ...
Nazirul Mubin bin Normansah +9 more
wiley +1 more source
Evaluation of deflagration fracturing effect based on the HJC constitutive model. [PDF]
Sci RepFan H, Wang C, Liu H, Xiong W, Tian Z.
europepmc +1 more source
Advanced Functional Materials, EarlyView.Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source