Results 181 to 190 of about 125,527 (282)

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Buckling Performance of Prefabricated Light-Gauge Steel Frame Materials Under Combined Random Defects During Construction: A CRITIC-Based Analysis. [PDF]

Materials (Basel)
Yao G, Lei T, Yang Y, Zhu M.
europepmc   +1 more source

A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films

Advanced Electronic Materials, EarlyView.
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan, Luca Camillini, Francesca Borghi, Giovanni Galafassi, Paolo Milani   +4 more
wiley   +1 more source

A framework for spontaneous Brillouin noise: unveiling fundamental limits in Brillouin metrology. [PDF]

Light Sci Appl
Jin S, Yao S, Yang Z, Du Z, Hong X, Soto MA, Xie J, Zhang L, Yang F, Wu J.   +9 more
europepmc   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

The dominant-egalitarian transition in species-rich communities. [PDF]

Elife
Kessler DA, Shnerb NM.
europepmc   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Breaking and restoring ocular balance: Temporal interactions in binocular rivalry and stereopsis. [PDF]

J Vis
Jiang R, Meng M.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Diffusion and discrete temporal models of the population growth of domestic cats in urban areas. [PDF]

Sci Rep
Perusquía-Cortés R, Padilla P.
europepmc   +1 more source