Results 11 to 20 of about 15,550,123 (259)

Systematic studies of graphite intercalation compounds with various intercalants using a first-principles calculation [PDF]

open access: yes, 2022
Graphite intercalation compounds (GICs) are formed by inserting various atoms and molecules between the layers of graphite. Among these GICs, five structures have been reported wherein a single atom M was intercalated into graphite with chemical formulae
Teruyasu, Mizoguchi   +2 more
core   +1 more source

Exploiting periodic first-principles calculations in NMR spectroscopy of disordered solids [PDF]

open access: yes, 2013
Much of the information contained within solid-state nuclear magnetic resonance (NMR) spectra remains unexploited because of the challenges in obtaining high-resolution spectra and the difficulty in assigning those spectra.
Ashbrook, Sharon Elizabeth   +1 more
core   +1 more source

First-principles investigation of divalent ion sensing with cesium lead trihalides

open access: yesOptical Materials: X, 2023
The first-principles calculations of the cesium lead trihalides, CsPbX3 (X = Cl, Br and I), doped with divalent ions such as Cd2+, Cu2+, Mg2+, Ni2+, Sn2+ and Zn2+ are carried out within the density functional theory to explore ion-sensing ability of ...
Tomoyuki Yamamoto   +7 more
doaj   +1 more source

Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

open access: yesCrystals, 2023
Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum.
Shihang Li, Lei Kang
doaj   +1 more source

Effects of Zn and Mg Segregations on the Grain Boundary Sliding and Cohesion in Al: Ab Initio Modeling

open access: yesMetals, 2021
The formation of Zn and Mg segregations at a tilt Σ5{013} grain boundary (GB) in Al and the effects of these solutes on deformation behavior of polycrystalline Al were investigated using ab initio total energy calculations. Using a step-by-step modeling
Andrey Kuznetsov   +3 more
doaj   +1 more source

Efficient calculation of carrier scattering rates from first principles

open access: yesNature Communications, 2021
It is difficult to compute the transport properties of a broad array of complex materials both accurately and inexpensively. Here, the authors develop a computationally efficient method for calculating carrier scattering rates of semiconductors, with ...
Alex M. Ganose   +5 more
doaj   +1 more source

Theoretical Study on Thermoelectric Properties and Doping Regulation of Mg3X2 (X = As, Sb, Bi)

open access: yesMetals, 2021
For searching both high-performances and better fits for near-room temperature thermoelectric materials, we here carried out a theoretical study on thermoelectric properties and doping regulation of Mg3X2 (X = As, Sb, Bi) by the combined method of first ...
Xiaofang Wang   +3 more
doaj   +1 more source

Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study

open access: yesCrystals, 2023
Doping is an important method to modulate the physical and chemical properties of two-dimensional materials. By substitutional doping, different group IV–VI atoms are doped in GeSe monolayers to compose the doped models, of which the effects are ...
Hao Ni   +6 more
doaj   +1 more source

First-principles calculations for attosecond electron dynamics in solids

open access: yes, 2020
Nonequilibrium electron dynamics in solids is an important subject from both fundamental and technological points of view. The recent development of laser technology has enabled us to study ultrafast electron dynamics in the time domain. First-principles
Shunsuke A. Sato (9023654)
core   +1 more source

Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations

open access: yesCrystals, 2018
Transferable, low-stress gallium nitride grown on graphene for flexible lighting or display applications may enable next-generation optoelectronic devices. However, the growth of gallium nitride on graphene is challenging.
Han Yan   +4 more
doaj   +1 more source

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