Results 221 to 230 of about 2,068,725 (306)

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

open access: yesAdvanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves   +8 more
wiley   +1 more source

Efficient in‐Plane Exciton Transport in a Discontinuous Layered Lead‐Bromide Perovskite

open access: yesAdvanced Materials, EarlyView.
A new class of two‐dimensional lead‐bromide perovskite based on monovalent 4‐aminomethylbenzoic acid cations is presented, featuring a discontinuous inorganic layer. Despite the discontinuous lattice, transient photoluminescence microscopy demonstrates efficient though strongly anisotropic in‐plane exciton transport.
Raquel Utrera‐Melero   +9 more
wiley   +1 more source

Charge Storage and Dark Photocatalysis in Multivariate Ti‐Based Metal‐Organic Frameworks

open access: yesAdvanced Materials, EarlyView.
The mixed‐linker series of the titanium‐based metal–organic framework COK‐47 enables systematic tuning of photoresponsiveness and (dark) photocatalytic activity, deepening our understanding of structure‐property‐function relationships. Tailored metal‐to‐ligand charge transfer between the secondary building units (metal‐oxo layers and organic linkers ...
Julia E. Knapp   +11 more
wiley   +1 more source

Turning Nd‐Fe‐B Swarf Into High‐Value Bulk Feedstocks via Sustainable Hydrogen Plasma: From Rare‐Earth Oxides to Metals and Hydrides

open access: yesAdvanced Materials, EarlyView.
Oxidized Nd‐Fe‐B magnet swarf is transformed into valuable bulk feedstock through a single‐step hydrogen plasma process. The reaction converts complex rare‐earth‐containing waste into separated metallic, oxide, and hydride fractions without acid leaching.
Naritai Chimed   +9 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

open access: yesAdvanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu   +12 more
wiley   +1 more source

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