Results 151 to 160 of about 115,649 (297)

Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals

open access: yesAdvanced Materials, EarlyView.
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici   +9 more
wiley   +1 more source

Punching shear of flat slabs [PDF]

open access: green, 2006
Tomaž Lavrenčič
openalex  

Colloidal Heterostructures Enable Interfacial Transport of Immiscible Molecules in Printable Organohydrogels

open access: yesAdvanced Materials, EarlyView.
Multiphase printable organohydrogels with tunable microstructures are developed to control molecular transport pathways for immiscible cargo. The tortuosity and domain size of the colloidal phases are tuned by adjusting temperature and shear during processing, which enables the tailoring of diffusion kinetics due to different transport pathways.
Riley E. Dowdy‐Green   +4 more
wiley   +1 more source

Transition of Néel‐Type and Bloch‐Néel Hybrid Skyrmion in a Metallic Multilayer Material System

open access: yesAdvanced Materials, EarlyView.
This work demonstrated a framework for manipulating multiple skyrmion types in [Pt/Co/Cu]5 multilayers through bias‐driven thermal effects. Distinct Néel and hybrid skyrmion phases can be selectively stabilized, enabling binary encoding beyond chirality‐based schemes.
Binbin Wang   +11 more
wiley   +1 more source

Pre- and post-punching failure performances of flat slab-column joints with drop panels and shear studs

open access: bronze, 2022
Ziyang Jiao   +6 more
openalex   +2 more sources

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

open access: yesAdvanced Materials, EarlyView.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker   +18 more
wiley   +1 more source

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