Results 181 to 190 of about 17,667 (300)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Organic photovoltaic prediction model based on Bayesian optimization and explainable AI. [PDF]

open access: yesSci Rep
Abdelghafar S   +4 more
europepmc   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Surface‐Interaction‐Driven Polarity Switching in II–V Cd3P2 Colloidal Quantum Dots for Infrared Photodiodes

open access: yesAdvanced Science, EarlyView.
. ABSTRACT Colloidal quantum dots (CQDs) based on II–V semiconductors offer attractive optical absorption and carrier transport properties for infrared optoelectronics, yet their device‐relevant electronic behavior remains poorly understood. In particular, Cd3P2 CQDs have been constrained by limited control over nanocrystal growth and carrier polarity.
Ha‐Chi V. Tran   +10 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

open access: yesAdvanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen   +6 more
wiley   +1 more source

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