Results 181 to 190 of about 41,794 (264)

Radiation‐Matter Interaction in Chemical Vapor Deposition‐Grown Two‐Dimensional Tungsten Disulfide

open access: yesAdvanced Materials Interfaces, EarlyView.
Gamma irradiation tunes the magnetic properties of CVD‐grown WS2 material. Moderate irradiation doses induce low‐temperature ferromagnetic‐like behavior, whereas higher doses suppress the magnetic response because of increased defect formation. These findings provide insight into defect‐mediated magnetism in 2D TMDs and could be relevant to future ...
Mongur Hossain   +3 more
wiley   +1 more source

The Role of High-Frequency Wall Vibrations in Adverse Vascular Remodeling of Arteriovenous Fistula for Hemodialysis. [PDF]

open access: yesKidney360
Soliveri L   +8 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Cornus Mas L. Seed‐Derived Biosorbent for Methylene Blue Removal: Surface Characterization and Biosorption Performance

open access: yesAdvanced Materials Interfaces, EarlyView.
Cornus mas L. seeds are transformed into a high‐performance biosorbent through chemical modification, effectively removing methylene blue from aqueous solutions. Comprehensive characterization and optimization reveal a maximum biosorption capacity of 71.71 mg g−1, establishing this sustainable, cost‐effective material as a promising solution for ...
Hakan Yıldız   +2 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

open access: yesAdvanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei   +10 more
wiley   +1 more source

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