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focused ion beam

Citation: 'focused ion beam' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09493 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual ...
openaire   +1 more source

Electroactive Metal–Organic Frameworks for Electrocatalysis

Advanced Functional Materials, EarlyView.
Electrocatalysis is crucial in sustainable energy conversion as it enables efficient chemical transformations. The review discusses how metal–organic frameworks can revolutionize this field by offering tailorable structures and active site tunability, enabling efficient and selective electrocatalytic processes.
Irena Senkovska, Yutong Luo, Ruyan Zhao, Jianjun Zhang, Mingchao Wang, Xinliang Feng, Eike Brunner, Stefan Kaskel   +7 more
wiley   +1 more source

Design and Focused Ion Beam Fabrication of Single Crystal Diamond Nanobeam Cavities

, 2010
We present the design and fabrication of nanobeam photonic crystal cavities in single crystal diamond for applications in cavity quantum electrodynamics.
Babinec, T. M., Choy, J. T., Khan, M., Loncar, M., Smith, K. J. M.   +4 more
core   +1 more source

Anisotropic Shear Properties of Organic Interfaces in Bio‐composite Materials

Advanced Functional Materials, EarlyView.
A novel cantilever design enables direct probing of shear properties at single organic interfaces within biocomposite prismatic ultrastructures. By decoupling lateral and torsional shear responses, the method reveals isotropic behavior in Atrina vexillum and pronounced anisotropy in Unio pictorum.
Kian Tadayon, Benny Bar‐On, Igor Zlotnikov   +2 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Universal In Situ Isotope Exchange Raman Spectroscopy (IERS) Methodology for Measuring Oxygen Surface Exchange Dynamics Using a Probe Layer

Advanced Functional Materials, EarlyView.
A bespoke multilayer thin film configuration has been designed, which overcomes the material dependency of conventional isotope exchange Raman spectroscopy (IERS). This universal IERS methodology is efficient, non‐destructive and provides additional structural information and time resolution, which can be further extended to various isotopic elements ...
Zonghao Shen, Francesco Chiabrera, Alexander Stangl, Laetitia Rapenne, Federico Baiutti, Carmen Jiménez, Albert Tarancón, Mónica Burriel   +7 more
wiley   +1 more source

Domain patterning in nonpolar cut PMN–PT by focused ion beam

Journal of Advanced Dielectrics
The formation of the ferroelectric domain structure as a result of irradiation by focused ion beam of [100]-cut 0.61Pb(Mg[Formula: see text]Nb[Formula: see text]O3–0.39PbTiO3 (PMN–PT) single crystals covered by surface artificial dielectric layer and ...
Elena Pashnina, Dmitry Chezganov, Alla Slautina, Anton Turygin, Andrei Ushakov, Qingyuan Hu, Xin Liu, Zhuo Xu, Xiaoyong Wei, Vladimir Shur   +9 more
doaj   +1 more source

Site-Specific Cryo-focused Ion Beam Sample Preparation Guided by 3D Correlative Microscopy [PDF]

, 2016
Jan Arnold, Julia Mahamid, Vladan Lučić, Alex de Marco, José‐Jesús Fernández, Tim Laugks, Tobias Mayer, Anthony A. Hyman, Wolfgang Baumeister, Jürgen M. Plitzko   +9 more
openalex   +1 more source

Device Integration Technology for Practical Flexible Electronics Systems

Advanced Functional Materials, EarlyView.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa, Kento Yamagishi, Sunghoon Lee, Yusaku Tagawa, Takao Someya, Tomoyuki Yokota   +5 more
wiley   +1 more source

YBa2Cu3O7 grain boundary junctions and low-noise superconducting quantum interference devices patterned by a focused ion beam down to 80 nm linewidth [PDF]

, 2010
J. Nagel, K. B. Konovalenko, M. Kemmler, M. Turad, R. Werner, E. Kleisz, S. Menzel, R. Klingeler, B. Büchner, R. Kleiner, D. Koelle   +10 more
openalex   +1 more source