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Advanced Functional Materials, EarlyView.Ag+‐mediated hydrothermal crystal engineering promotes preferential [hk1]‐oriented growth of Sb2Se3 via an ultrathin MoOx interlayer, improving crystallinity and suppressing non‐radiative recombination. The optimized Ag+ treatment photocathode delivers 24.7 mA cm−2 at 0 VRHE and improved stability, revealing an ion‐modulated route to high‐performance ...
Ziying Zhang +10 more
wiley +1 more source
Structural Porosity and Low Mineral Density in Enamel Rods Drive Molar Incisor Hypomineralisation
Advanced Functional Materials, EarlyView.This study uses advanced imaging modalities on multiple length scales to show that molar‐incisor hypomineralization does not present as a locally homogeneous pathology. Instead, microstructural defects, characterized through non‐mineralized, protein‐rich sheaths and an altered mineral structure in between prism rods, resulting in local differences in ...
Katharina Jähn‐Rickert +14 more
wiley +1 more source
Localization of Conductive Filaments in TaOx Memristor using Focused Ion Beam Irradiation.
, 2014 Jose L Pacheco +5 more
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Focused ion beam production of nanoelectrode arrays
, 2005 Abdelhamid Errachid +6 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1995
The measurement of resist image size using a finely focused ion beam (FIB) is described. Comparisons of FIB and scanning electron microscope (SEM) measurements of resist features are presented. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension metrology.
A. Wagner +3 more
openaire +1 more source
The measurement of resist image size using a finely focused ion beam (FIB) is described. Comparisons of FIB and scanning electron microscope (SEM) measurements of resist features are presented. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension metrology.
A. Wagner +3 more
openaire +1 more source
Ion beam mixing by focused ion beam
Journal of Applied Physics, 2007Si amorphous (41 nm)/Cr polycrystalline (46 nm) multilayer structure was irradiated by 30 keV Ga+ ions with fluences in the range of 25−820 ions∕nm2 using a focused ion beam. The effect of irradiation on the concentration distribution was studied by Auger electron spectroscopy depth profiling, cross-sectional transmission electron microscopy, and ...
Árpád Barna +7 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
Focused ion beams of Be and Si were used to expose the following resists: PMMA, HEBR-214, KTI 820, and Microposit 2400. The resist thickness remaining for various development times was measured. For example, the minimum dose of 200 keV Be ions needed to expose 6800 Å thick PMMA varied from 7×1012 to 2×1013 ions/cm2 depending on development time.
J. S. Huh, M. I. Shepard, J. Melngailis
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Focused ion beams of Be and Si were used to expose the following resists: PMMA, HEBR-214, KTI 820, and Microposit 2400. The resist thickness remaining for various development times was measured. For example, the minimum dose of 200 keV Be ions needed to expose 6800 Å thick PMMA varied from 7×1012 to 2×1013 ions/cm2 depending on development time.
J. S. Huh, M. I. Shepard, J. Melngailis
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Vacuum, 1986
Abstract A system for the investigation of maskless ion beam milling is described which is based on a compact microfocused ion beam column incorporating a high brightness metal ion source. Images of the specimen can be obtained by collecting either secondary electrons or scattered ions.
R.E.J. Watkins +4 more
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Abstract A system for the investigation of maskless ion beam milling is described which is based on a compact microfocused ion beam column incorporating a high brightness metal ion source. Images of the specimen can be obtained by collecting either secondary electrons or scattered ions.
R.E.J. Watkins +4 more
openaire +1 more source