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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
Abstract Demands tor high resolution lithography are continuously increasing both for VLSI device fabrication and explorative research for various quantum device fabrications. At present, various nanofabrication techniques are investigated. The focused ion beam lithography technique provides high resolution and high flexibility and is attractive as ...
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Abstract Demands tor high resolution lithography are continuously increasing both for VLSI device fabrication and explorative research for various quantum device fabrications. At present, various nanofabrication techniques are investigated. The focused ion beam lithography technique provides high resolution and high flexibility and is attractive as ...
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Metallurgical and Materials Transactions A, 2004
The focused ion beam (FIB) has become an important tool in materials science for studying and modifying materials systems at the micro and nanometer levels. The technique, due to its ability to perform precision in-situ milling, has been extended to studying three-dimensional structural and chemical relationships.
A. J. Kubis +3 more
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The focused ion beam (FIB) has become an important tool in materials science for studying and modifying materials systems at the micro and nanometer levels. The technique, due to its ability to perform precision in-situ milling, has been extended to studying three-dimensional structural and chemical relationships.
A. J. Kubis +3 more
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010
With the goal of expanding the capabilities of focused ion beam microscopy and milling systems, the authors have demonstrated nanoscale focusing of chromium ions produced in a magneto-optical trap ion source. Neutral chromium atoms are captured into a magneto-optical trap and cooled to 100 μK with laser light at 425 nm.
A. V. Steele +3 more
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With the goal of expanding the capabilities of focused ion beam microscopy and milling systems, the authors have demonstrated nanoscale focusing of chromium ions produced in a magneto-optical trap ion source. Neutral chromium atoms are captured into a magneto-optical trap and cooled to 100 μK with laser light at 425 nm.
A. V. Steele +3 more
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Vacuum, 1991
Abstract There has been an increasing interest in focused ion beam processing for applications to microfabrication technology. Many high-brightness, submicron-meter focused ion beam system have already been developed. Using these focused ion beam systems, various maskless processing techniques have been developed.
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Abstract There has been an increasing interest in focused ion beam processing for applications to microfabrication technology. Many high-brightness, submicron-meter focused ion beam system have already been developed. Using these focused ion beam systems, various maskless processing techniques have been developed.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
Abstract Lithography for microelectronics, that is, the exposure and development of resist, is already being carried out in research laboratories at dimensions well below 0.1 μm. In production the minimum dimensions are likely to approach 0.1 μm before the end of the decade.
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Abstract Lithography for microelectronics, that is, the exposure and development of resist, is already being carried out in research laboratories at dimensions well below 0.1 μm. In production the minimum dimensions are likely to approach 0.1 μm before the end of the decade.
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Metal assisted focused-ion beam nanopatterning
Nanotechnology, 2016Focused-ion beam milling is a versatile technique for maskless nanofabrication. However, the nonuniform ion beam profile and material redeposition tend to disfigure the surface morphology near the milling areas and degrade the fidelity of nanoscale pattern transfer, limiting the applicability of the technique.
Akash, Kannegulla, Li-Jing, Cheng
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
Abstract Focused ion beam processing is attractive for various maskless processing with the capability of submicron structure fabrication. Many studies have been performed to develop new processing techniques and to demonstrate the unique capability of focused ion beam processing.
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Abstract Focused ion beam processing is attractive for various maskless processing with the capability of submicron structure fabrication. Many studies have been performed to develop new processing techniques and to demonstrate the unique capability of focused ion beam processing.
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Application of highly focused ion beams
AIP Conference Proceedings, 1997The impressive development of focused ion beam (FIB) systems from the laboratory level to high performance industrial machines during the last twenty years is briefly reported. The design and the functional principle of a liquid metal ion source as well as a FIB column are described. The main application fields of the FIB technology are discussed. More
Bischoff, L., Teichert, J.
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Ion beam, focused ion beam, and plasma discharge machining
CIRP Annals, 2009Non-conventional methods of machining are used for many engineering applications where the traditional processes fail to be cost-effective. Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining.
D.M. Allen +6 more
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Ion beam synthesis of cobalt disilicide using focused ion beam implantation
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998Cobalt disilicide layers were formed by cobalt focused ion beam implantation into silicon. It was found that the CoSi2 layer formation strongly depends on the pixel dwell time. In order to obtain continuous layers, short dwell times of a few μs are needed. Rutherford backscattering and channeling measurements were carried out to understand this effect.
Teichert, J., Bischoff, L., Hausmann, S.
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