Results 11 to 20 of about 50 (50)

dHvA MEASUREMENTS ON La_1-xCe_xMIn₅ WHERE M=Rh, Ir AND Co

Physical Phenomena at High Magnetic Fields IV, 2002
Measurements of the de Haas-van Alphen effect in Ce x La 1-x MIn 5 show that x dependence for the three different value of M behaves quite differently. The Ce 4f electrons remain localized and have little interaction for all x in the Rh alloys, but strongly interact with the conduction electrons in both the Ir and Co alloys. Both the dependence on
Z. Fisk, Nicholas M. Harrison, R. G. Goodrich, Ümit Alver, J. L. Sarrao, Donavan Hall   +5 more
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CALCULATED STRUCTURAL AND ELASTIC PROPERTIES OF M₂InC(M=Sc, Ti, V, Zr, Nb, Hf, Ta)

Modern Physics Letters B, 2008
Using ab initio calculations, we have studied the structural and elastic properties of M 2 InC , with M = Sc , Ti , V , Zr , Nb , Hf and Ta . Geometrical optimization of the unit cell is in agreement with the available experimental data. We have observed a quadratic dependence of the lattice parameters versus the applied pressure.
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THEORETICAL STUDIES ON THE GYROMAGNETIC FACTORS FORFe³⁺INZnX(X=O,S,Se,Te)

Modern Physics Letters B, 2010
The gyromagnetic factors for Fe3+in ZnX ( X = O , S , Se , Te ) are theoretically studied from the perturbation formula of the g-factor for a 3d5ion in tetrahedra based on inclusion of both the crystal-field and the charge-transfer contributions. The related model parameters in the calculations are determined from the cluster approach in a uniform way.
Xue-Feng Wang, Shao-Yi Wu, Shao-Yi Wu, Pei Xu, Li-Li Li   +4 more
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THE EFFECT OF a-SiN:H AND a-Si:H SURFACE ROUGHNESS OF TFT BY PE/RACVD

International Journal of Modern Physics B, 2010
This paper describes the influence of surface roughness on the mobility of a - SiN : H and a - Si : H . For the a - SiN : H deposited by PECVD, the roughness was 0.832 nm. The a - SiN : H layer composed of (PECVD 150 nm + RACVD 100 nm) had better characteristic of roughness than the a - SiN : H layer (PECVD 250 nm) by 47%. The roughness of the a - Si :
Sie-Young Choi, Sang-Hyuk Ryu, Jin-Eui Kim   +2 more
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DEPOSITION OF M—C (M = Cr, Mn, Fe) FILMS BY MAGNETRON SPUTTERING

Modern Physics Letters B, 2005
Thin films of M — C ( M = Cr , Mn , Fe ) have been deposited on silicon substrates by magnetron sputtering. It was found that interdiffusion between carbide films and silicon substrates occurred for Mn — C/Si and Fe — C/Si samples. The hardness and elastic modulus of the Cr — C films were around 16 ± 1 GPa and 210 ± 21 GPa , respectively.
Q. R. Hou, H. Y. Zhang
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PROPERTIES OF Y_1-XSR_XBA_2-XLA_XCU₃O_Y CARRIER COMPENSATION SYSTEM

International Journal of Modern Physics B, 2007
The samples of Y 1-x Sr x Ba 2-x La x Cu 3 O y (YSBLCO) were synthesized and characterized by DC magnetization measurements and X-ray diffraction. The structures of the samples were refined by Rietveld method. Although the carrier concentration in the samples is constant at different dopant levels, the superconductivity evidently changes. We
X. F. Sun, H. Zhang, Yunping Xu, Jingru Yu   +3 more
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REACTIVE RESONANCE AND FORMATION MECHANISM STUDIES OF THE H + NO → N + OH OR O + NH REACTION

Journal of Theoretical and Computational Chemistry, 2006
The partial potential energy surface (PPES) of H + NO → N + OH or O + NH of 3A″ symmetry is first constructed using QCISD (T) method with 6-311++g** basis set, and then we speculate the existence of the scattering resonance states of these reactions.
Dacheng Feng, Zhengting Cai, Qiang Wang
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DESIGN & OPTIMIZATION OF AN I-RTD HYBRID THz OSCILLATOR BASED UPON In_1−xGa_xAs/GaSb_yAs_1−y HETEROSTRUCTURE SYSTEMS

International Journal of High Speed Electronics and Systems, 2007
An In 1− x Ga x As / GaSb y As 1− y hetero-system with staggered band-lineups as solid-state platform for design of an interband resonant double-barrier tunneling diode (I-RTD) based optically-pulsed (OT) hybrid device for generating THz oscillations is theoretically investigated.
Weidong Zhang, Boris Gelmont, Elliott R. Brown, Robert J. Trew, Dwight L. Woolard   +4 more
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ad fontes

2007
Tidsskrift for Praktisk Teologi, Vol. 34 No.
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INDUCED DEFECTS IN a-Si:H/a-SiNx:H MULTILAYERS BY USE OF A POSITRON ANNIHILATION TECHNIQUE

Modern Physics Letters B, 1996
In a - Si : H / a - SiN x: H multilayers, in addition to induced distortions, there are a large number of induced defects in the interface regions between a-Si:H and a - SiN x: H due to structural mismatch. In this experiment, we measured a series of a - Si : H / a - SiN x: H (x= 0.5) multilayers by the positron annihilation technique (PAT) and, on ...
Min-Kang Teng, Sheng-Kang Guo, Guo-Rong Cao, Yin-Chun Liu, Cai Chen, Zhi-Chao Wang   +5 more
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