Results 181 to 190 of about 2,493,634 (295)

3D Bioprinted Blood–Brain–Tumor Barrier Spheroid‐Based In Situ Evaluation of Anticancer Compounds Against Glioblastoma: ROS‐Producing Ruthenium as a Potential Therapeutic Candidate

open access: yesAdvanced Science, EarlyView.
The blood–brain–tumor barrier (BBTB) penetration by anticancer drugs and their effects on glioblastoma (GBM) is assessed using 3D bioprinted‐spheroids. Anticancer drug‐induced U‐87 MG cell death is quantified through in situ imaging of spheroids using a cancer cell death probe. The Ru compound, a partial P‐gp substrate, induces greater tumor‐cell death
Hyunjung Lee   +5 more
wiley   +1 more source

The Long-Run Effect of Foreign Aid on Domestic Output [PDF]

open access: yes
This paper makes two main contributions. First, we examine the long-run effect of foreign aid on domestic output for 59 developing countries using heterogeneous panel cointegration techniques to control for omitted variable and endogeneity bias and to ...
Morrissey, Oliver, Herzer, Dierk
core  

NGOs, Foreign Aid, and Development in Nepal. [PDF]

open access: yesFront Public Health, 2016
Karkee R, Comfort J.
europepmc   +1 more source

Immune Biomarkers of Islet Transplant Rejection Revealed by Synthetic Immunological Niche

open access: yesAdvanced Science, EarlyView.
A subcutaneous synthetic immunological niche (IN) enables serial, minimally invasive monitoring of immune responses after islet transplantation. Flow cytometry and transcriptomic profiling of the IN reveal immune‐cell programs associated with graft acceptance and distinct types of rejection.
Jyotirmoy Roy   +8 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

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