Results 211 to 220 of about 9,634 (299)
The mean field market model revisited. [PDF]
Hasenbichler M, Müller W, Thonhauser S.
europepmc +1 more source
High‐bromide wide‐bandgap perovskites suffer from defects and phase segregation, limiting tandem performance. We report a bulk–surface coupling effect to heal lattice/surface defects and suppress halide migration. As a result, the wide‐bandgap device achieves 23.71% efficiency, while monolithic Si‐based tandems reach 32.26%, exhibiting exceptional long‐
Yu Tong +8 more
wiley +1 more source
Quantifying the Linguistic Complexity of Pan-Homophonic Events in Stock Market Volatility Dynamics. [PDF]
Zhang Y, Tian J, Zou Y, Zhang X, Cai X.
europepmc +1 more source
The redox‐active nature of NiOx enables ultrafast oxidative doping of spiro‐OMeTAD within seconds. Concurrently, NiOx‐Li+ coordination complexes formed during this redox process are selectively removed by filtration, effectively extracting residual Li+ ions from the film.
Yun Seop Shin +19 more
wiley +1 more source
Economic feasibility and risk analysis of industrial hemp production: a comparative assessment of floral, fiber, and grain enterprises in North Carolina, USA. [PDF]
Quaicoe O +4 more
europepmc +1 more source
The Forward Premium Bias, Carry Trade Return and the Risks of Volatility and Liquidity
Ali Shehadeh +2 more
openalex +1 more source
Non‐Equilibrium Synthesis Methods to Create Metastable and High‐Entropy Nanomaterials
ABSTRACT Stabilizing multiple elements within a single phase enables the creation of advanced materials with exceptional properties arising from their complex composition. However, under equilibrium conditions, the Hume–Rothery rules impose strict limitations on solid‐state miscibility, restricting combinations of elements with mismatched crystal ...
Shuo Liu +3 more
wiley +1 more source
Empirical Study on Fluctuation Theorem for Volatility Cascade Processes in Stock Markets. [PDF]
Maskawa JI.
europepmc +1 more source
Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren +8 more
wiley +1 more source

