Results 211 to 220 of about 9,634 (299)

The mean field market model revisited. [PDF]

open access: yesEur Actuar J
Hasenbichler M, Müller W, Thonhauser S.
europepmc   +1 more source

Integrated Bulk–Surface Engineering Stabilizes MA‐Free Wide‐Bandgap Perovskites for Tandem Photovoltaics

open access: yesAdvanced Science, EarlyView.
High‐bromide wide‐bandgap perovskites suffer from defects and phase segregation, limiting tandem performance. We report a bulk–surface coupling effect to heal lattice/surface defects and suppress halide migration. As a result, the wide‐bandgap device achieves 23.71% efficiency, while monolithic Si‐based tandems reach 32.26%, exhibiting exceptional long‐
Yu Tong   +8 more
wiley   +1 more source

Redox‐Active NiOx‐Catalyzed Li+ Capture‐Extraction Strategy for tBP‐Free Spiro‐OMeTAD Enables Exceptional Damp‐Heat Stability in Perovskite Solar Cells

open access: yesAdvanced Science, EarlyView.
The redox‐active nature of NiOx enables ultrafast oxidative doping of spiro‐OMeTAD within seconds. Concurrently, NiOx‐Li+ coordination complexes formed during this redox process are selectively removed by filtration, effectively extracting residual Li+ ions from the film.
Yun Seop Shin   +19 more
wiley   +1 more source

Non‐Equilibrium Synthesis Methods to Create Metastable and High‐Entropy Nanomaterials

open access: yesAdvanced Science, EarlyView.
ABSTRACT Stabilizing multiple elements within a single phase enables the creation of advanced materials with exceptional properties arising from their complex composition. However, under equilibrium conditions, the Hume–Rothery rules impose strict limitations on solid‐state miscibility, restricting combinations of elements with mismatched crystal ...
Shuo Liu   +3 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

open access: yesAdvanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren   +8 more
wiley   +1 more source

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