Results 221 to 230 of about 2,173,818 (361)

Ohmic Response in BiFeO3 Domain Walls by Submicron‐Scale Four‐Point Probe Resistance Measurements

open access: yesAdvanced Electronic Materials, EarlyView.
Lateral transport measurements of multiferroic domain walls (DWs) in BiFeO3 thin films employing a novel, lithography‐free method are presented. Using a submicron‐scale multi‐point probe (MPP), ohmic DW conduction behavior is demonstrated, including the first collinear, four‐point resistivity value of a single DW, free of contact resistances.
Jan L. Rieck   +8 more
wiley   +1 more source

Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection

open access: yesAdvanced Electronic Materials, EarlyView.
Does my breath smell? A major advancement is reported in amorphous Zn‐Sn‐O‐based thin‐film transistors using a multilayer design. In‐depth compositional and morphological analyses provide pathways to achieve outstanding electronic performance. The solution‐processed method demonstrates proof‐of‐concept for VOC detection, with significant potential for ...
Lauren R. Miller   +12 more
wiley   +1 more source

Building strength for the long haul toward liberation: What psychology can contribute to the resilience of communities targeted by state‐sanctioned violence

open access: yesAmerican Journal of Community Psychology, Volume 70, Issue 3-4, Page 475-492, December 2022., 2022
Abstract State‐sanctioned violence (SSV) has resounding effects on entire populations, and marginalized communities have long persisted in the work toward liberation despite continued SSV. This paper aims to bridge the gap between the vast scholarship on resilience and the practical challenge of sustaining and thriving in communities targeted by SSV ...
Kris T. Gebhard   +4 more
wiley   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
HfOx‐based resistive random‐access‐memory (TiN/Ti/HfOx/RuOx/TiN) is fabricated by CMOS‐compatible materials – ruthenium, with a maskless etching‐free process. After a 5‐Mrad total ionizing dose test, the results showed non‐degradation performance, memory window ≈ 40 with operation power < 2 mW, > 8k endurance cycles, and 15‐year retention, which can be
Yao‐Feng Chang   +3 more
wiley   +1 more source

Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a wearable device for the non‐invasive measurement of radial arterial pressure pulse waveforms, incorporating a highly sensitive flexible Lead Zirconate Titanate (PZT) piezoelectric sensor and an optimized tightness‐free attachment method to maximize the sensitivity.
Minyu Li   +3 more
wiley   +1 more source

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