Results 211 to 220 of about 981,232 (260)

The Connection Layout in a Lattice of Four-Terminal Switches

2019
A non classical approach to the logic synthesis of Boolean functions based on switching lattices is considered, for which deriving a feasible layout has not been previously studied. All switches controlled by the same literal must be connected together and to an input lead of the chip, and the layout of such connections must be realized in superimposed
Bernasconi A., Boffa A., Luccio F., Pagli L.   +3 more
openaire   +1 more source

A novel application of four-terminal floating nullors

Proceedings of the IEEE, 1987
It is shown that four-terminal floating nullors provide a novel solution to the problem of RC-active synthesis of floating immittances.
openaire   +1 more source

Analysis of Four-Terminal Cascade Networks

IEEE Transactions on Circuit Theory, 1964
This paper presents a new approach to the analysis of cascaded networks. A second-degree difference equation for the current along the cascade is obtained for the general cascaded structure. In general, difference equation techniques lead to solutions in the form of infinite series having unknown properties. This difficulty is overcome by attacking the
B. Dasher, M. Moad
openaire   +1 more source

A four-terminal wideband monolithic amplifier

1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1981
A monolithic wideband amplifier which achieves 18dB gain, 700MHz bandwidth, 4dB noise figure and 50-ohm terminal impedances, will be described. Circuit consumes 18mW and is housed in a 4-lead TO 46 package.
R. Meyer, R. Blauschild
openaire   +1 more source

Four-terminal field-effect transistors

IEEE Transactions on Electron Devices, 1965
A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor.
R.S.C. Cobbold, F.N. Trofimenkoff
openaire   +1 more source

Four-terminal operation of m.o.s. transistors

Proceedings of the Institution of Electrical Engineers, 1966
The charge induced in the channel of a silicon m.o.s.t. due to the capacitance of the depletion layer in the bulk material has a significant effect if the resistivity is less than about 10?cm. With the substrate short-circuited to the source, the pinchoff voltage is reduced.
openaire   +1 more source

Four terminal-pair to anything else!

IEE Colloquium Interconnections from DC to Microwaves, 1999
Before the impedance of a device can be measured properly it must first be defined by specifying appropriate electrical conditions at the terminals of the device where the conductors from the measuring instrument connect to it. It is then the business of the metrologist to ensure that these defining conditions, or ones equivalent to them, or ones which
openaire   +1 more source

Four-Terminal Thermal Conductance of Mesoscopic Dielectric Systems

Physical Review Letters, 2002
A four-terminal thermal conductance formula for a mesoscopic dielectric system with arbitrary central scattering region is derived. Similar to four-terminal electric conductance, the four-terminal thermal conductance also has a set of Onsager relations.
Qing-Feng, Sun, Ping, Yang, Hong, Guo
openaire   +2 more sources

Neutralizing and protective human monoclonal antibodies recognizing the N-terminal domain of the SARS-CoV-2 spike protein

Cell, 2021
Robert Carnahan, Pei-Yong Shi, Seth Zost   +2 more
exaly  

Quantum Hall effect at a four-terminal junction

Physical Review Letters, 1989
, Ravenhall, , Wyld, , Schult
openaire   +2 more sources