Results 201 to 210 of about 18,001 (260)

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Flexomagnetic Effect in Wrinkled SrRuO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
The strain‐gradient‐driven flexoelectric polarization can modify the magnetic moment of a magnetic film. In this work, SrRuO3 is grown epitaxially on a water‐soluble sacrificial layer Sr3Al2O6, thereby enabling the formation of wrinkled structures. The so‐called flexomagnetic effect is then observed in a wrinkled SrRuO3 film.
Liwen Zhu   +6 more
wiley   +1 more source

Bonding strength and fatigue survival of conventional, additive and subtractive complete dentures. [PDF]

open access: yesSci Rep
Lüchtenborg J   +6 more
europepmc   +1 more source

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