Results 201 to 210 of about 4,073,204 (305)

Pulsed field ablation for atrial fibrillation in patients with heart failure: insight from the ATHENA registrys. [PDF]

open access: yesEuropace
Schiavone M   +27 more
europepmc   +1 more source

On freedom [PDF]

open access: yesCanadian Medical Association Journal, 2011
openaire   +2 more sources

Why Is the Mechanism Underlying the Chiral‐Induced Selectivity Effect Still Challenging?

open access: yesAdvanced Materials, EarlyView.
The chiral‐induced spin selectivity (CISS) effect is observed in many experimental configurations and for different materials. However, there are theoretical challenges in attempting to explain those results. A qualitative framework for explaining all the results is presented.
Ron Naaman, Yossi Paltiel
wiley   +1 more source

Orientation Engineering of MXene Flakes

open access: yesAdvanced Materials, EarlyView.
Orientation engineering of MXene flakes refers to the transformation of disordered MXene flakes into ordered architectures with optimized multiphysical transport properties. Focusing on this topic, this review outlines key principles, characterization, fabrication strategies, and advanced applications of oriented MXene structures.
Yizhou Wang   +7 more
wiley   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

open access: yesAdvanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu   +19 more
wiley   +1 more source

Rutile Without Substrate Limitations: Top‐Interface‐Driven Crystallization of TiO2

open access: yesAdvanced Materials, EarlyView.
A RuO2 upper layer acts as a removable crystallization template that triggers rutile TiO2 formation from the top interface, independent of the underlying substrate. This top‐interface‐driven crystallization mechanism enables rutile growth even on amorphous ZrO2/TiN, offering a substrate‐agnostic route to high‐k dielectrics compatible with DRAM process ...
Jihoon Jeon   +3 more
wiley   +1 more source

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