Results 71 to 80 of about 4,433,394 (276)
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung +9 more
wiley +1 more source
Ultra-wideband (UWB) systems having a bandwidth on the order of gigahertz have recently received wide attention both in the U.S. and in Europe. The family of UWB systems may communicate either by generating ultra-wideband signals or with the aid of ...
Yang, L-L, Hanzo, L.
core +1 more source
Trions as Fundamental Species in Chemically Doped Polymer Semiconductors
This work shows that exciton–charge carrier coupling in doped polymer semiconductors gives rise to multi‐particle states, including trions—quasiparticles consisting of two holes and one electron under p‐doping—and bound exciton‐hole pairs, as identified through spectroscopic and theoretical analysis.
Hongmo Li +23 more
wiley +1 more source
Multistage Frequency-Hopping Assisted Ultra-Wideband Multiple-Access Communications
Ultra-WideBand (UWB) systems having a bandwidth on the order of a Gigahertz have recently received wide attention both in the USA and in Europe. In this contribution a novel UWB multiple access scheme based on the well-known family of Frequency-Hopping ...
Yang, L-L, Hanzo, L
core +1 more source
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald +7 more
wiley +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Optimal Constructions of Low-Hit Zone Frequency-Hopping Sequence Set Based on m-Sequence
Quasi-Synchronous Frequency hopping (FH) Multiple Access (QS-FHMA) systems feature high communication efficiency, strong flexibility, and low operational costs, and they have been widely used in various FH communication scenarios such as satellite ...
Changyuan Wang +3 more
doaj +1 more source
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
wiley +1 more source
Design and Processing of a Novel Chaos-Based Stepped Frequency Synthesized Wideband Radar Signal
The linear stepped frequency and linear frequency shift keying (FSK) signal has been widely used in radar systems. However, such linear modulation signals suffer from the range–Doppler coupling that degrades radar multi-target resolution.
Tao Zeng +3 more
doaj +1 more source
Electrolyte Design for Fast‐Charging Lithium‐Based Batteries
A decade of progress in fast‐charging electrolytes for lithium batteries is reviewed. Electrolyte design strategies spanning solvents, salts, additives, and advanced systems, such as localized high‐concentration electrolytes (LHCEs), are summarized. Advanced diagnostic tools for lithium plating and interphase chemistry are discussed, with perspectives ...
Chen Liu, Zehao Cui, Arumugam Manthiram
wiley +1 more source

