Results 201 to 210 of about 4,863,781 (309)

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Random optical parametric oscillator fibre sensor. [PDF]

open access: yesLight Sci Appl
Tovar P   +4 more
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Redox Modulation and Diffusion Kinetics in Ni-Doped CuO: Insights from Quantum-Inspired Electrochemical Methods. [PDF]

open access: yesACS Appl Mater Interfaces
Lin TT   +17 more
europepmc   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

open access: yesAdvanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou   +9 more
wiley   +1 more source

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang   +5 more
wiley   +1 more source

Ultrahigh Detectivity Colloidal Quantum dot Avalanche Photodetectors Driven by Electron Mobility of the n‐Type Layer

open access: yesAdvanced Electronic Materials, EarlyView.
Herein, electron mobility of the n‐type layer is demonstrated to be a key parameter governing detection performance in CQD‐APDs through a comparative study of ZnO nanoparticles (NPs) and ZnO sol–gel (S‐G). The incorporation of ZnO NPs with high electron mobility facilitates efficient extraction of photogenerated electrons, thereby achieving improved ...
Changjo Kim, Byeongsu Kim
wiley   +1 more source

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