Results 201 to 210 of about 4,863,781 (309)
Robust overlapping covert communication against partialband interference via chaotic multi-tone spread spectrum. [PDF]
Guo S, Liu D, Fu Y.
europepmc +1 more source
Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki +3 more
wiley +1 more source
Random optical parametric oscillator fibre sensor. [PDF]
Tovar P +4 more
europepmc +1 more source
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini +9 more
wiley +1 more source
Redox Modulation and Diffusion Kinetics in Ni-Doped CuO: Insights from Quantum-Inspired Electrochemical Methods. [PDF]
Lin TT +17 more
europepmc +1 more source
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou +9 more
wiley +1 more source
Ni<sup>2+</sup>-doped magnesium aluminosilicate nanoceramics: structural, optical, dielectric, and antimicrobial properties. [PDF]
Mansour AM +3 more
europepmc +1 more source
An interpolated frequency-hopping spread-spectrum transceiver system. [PDF]
openaire +1 more source
Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang +5 more
wiley +1 more source
Herein, electron mobility of the n‐type layer is demonstrated to be a key parameter governing detection performance in CQD‐APDs through a comparative study of ZnO nanoparticles (NPs) and ZnO sol–gel (S‐G). The incorporation of ZnO NPs with high electron mobility facilitates efficient extraction of photogenerated electrons, thereby achieving improved ...
Changjo Kim, Byeongsu Kim
wiley +1 more source

