Results 121 to 130 of about 2,450,882 (221)
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
We address the inherently weak particle adhesion of conventional air filters by coating a dynamically crosslinked adhesive layer that delivers capillarity‐driven strong adhesion and particle absorption mediated by dynamic bond exchange. The resulting enhancement in particle adhesion enables efficient ultrafast (up to 20 m s−1) and omnidirectional ...
Junyong Park +11 more
wiley +1 more source
A highly‐emissive organic photovoltaic employs donor–acceptor pairs with alternately localized frontier molecular orbitals, preserving high triplet energies and small reorganization energies to suppress non‐radiative recombination. As a result, it exhibits a high open‐circuit voltage approaching the Shockley–Queisser limit and a high ...
Qing‐Jun Shui +7 more
wiley +1 more source
A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing +10 more
wiley +1 more source
Biodegradable polymeric films incorporated with a synergistic blend of metallic nanocomposites are developed and characterized. The films exhibit enhanced antibacterial activity against foodborne pathogens, demonstrating their potential as active materials for food packaging.
Adriana Dos Santos Silva +5 more
wiley +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source

