Results 11 to 20 of about 223,887 (275)
Design and simulation of silicon detector cells with spiral ring electrode structures
AIP Advances, 2021 Traditional pixel detectors are neatly arranged rectangular or square electrodes that cover almost the entire surface. Large electrode areas lead to high capacitance, and capacitance is the primary factor affecting detector noise.
Xinqing Li, Manwen Liu, Zheng Li
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Heliyon, 2023 In this study, we investigated the effects of Zn doping on electrical properties and conduction mechanisms of n-silicon (n-Si) diodes using current-voltage (I–V) and capacitance-voltage-frequency (C–V–f) measurements.
D.A. Oeba, J.O. Bodunrin, S.J. Moloi
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Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS
Sensors, 2021 Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology ...
Thomas Corradino +4 more
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Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
Micromachines, 2022 This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas.
Haiping Wang +7 more
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Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector
Micromachines, 2020 In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm.
Manwen Liu, Tao Zhou, Zheng Li
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Ultra-Low Capacitance Spot PIN Photodiodes
IEEE Photonics Journal, 2023 Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 μm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the ...
Bernhard Goll +2 more
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Giant Oscillating Thermopower at Oxide Interfaces [PDF]
, 2015 Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures.
Delugas, P. +9 more
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Electrical properties study under radiation of the 3D-open-shell-electrode detector
AIP Advances, 2018 Since the 3D-Open-Shell-Electrode Detector (3DOSED) is proposed and the structure is optimized, it is important to study 3DOSED’s electrical properties to determine the detector’s working performance, especially in the heavy radiation environments, like ...
Manwen Liu, Zheng Li
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Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]
, 2018 A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J. +8 more
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Advanced Materials Interfaces, 2023 High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized.
Yin Jou Khong +2 more
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