Results 221 to 230 of about 223,887 (275)

Miller-Capacitance Analysis of High-Voltage MOSFETs and Optimization Strategies for LowPower Dissipation

International Conference on Simulation of Semiconductor Processes and Devices, 2021
High voltage MOSFETs are widely used for bias ranges of a few dozens of volts to a few hundred of volts. The trench-type MOSFET is one of the key devices for realizing this wide range applications.
T. Iizuka, M. Miura-Mattausch, D. Navarro, H. Kikuchihara, T. Umeda, H. Mattausch, Takao Yamamoto   +6 more
semanticscholar   +1 more source

Investigation of breakdown voltage degradation in low-voltage narrow gate trench MOSFET by edge termination optimization

Semiconductor Science and Technology, 2021
In this paper, we investigate breakdown voltage degradation in a 25 V low-voltage narrow gate (NG) shield-gate trench MOSFET (NG-SGTMOS). Experiments and simulations based on Technology Computer-Aided Design (TCAD) indicate that electric field crowding ...
Zhengkang Wang, M. Qiao, Dong Fang, Kui Xiao, Sen Zhang, Zhao Qi, Zhaoji Li, Bo Zhang   +7 more
semanticscholar   +1 more source

Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
High-voltage single-emitter (HV SE) Horizontal Current Bipolar Transistor (HCBT) with CMOS $p$-well RESURF region is analyzed with respect to its utilization in RF circuits.
J. Žilak, Željko Osrečki, M. Koričić, F. Bogdanović, T. Suligoj   +4 more
semanticscholar   +1 more source

Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data

Solid State Phenomena
In this work we present the results of a comparison between the non-contact corona-based QUAD (Quality, Uniformity and Defects) technique for inline mapping of electrically active defects in SiC epi and final wafer level electrical device data on merged ...
Firas Faisal, Nils Steller, Robin Karhu, Birgit Kallinger, Gennadi Polisski, M. Wilson, A. Savtchouk, Liliana Gutierrez, C. Almeida, D. Marinskiy, J. Lagowski   +10 more
semanticscholar   +1 more source

A comprehensive analysis of ultra low power GNRFET based 20T hybrid full adder for computing applications

Physica Scripta
In an era where energy efficiency is as important as computational speed, this paper introduces a new full adder circuit design that effectively integrates dynamic power gathering (DPG) power conservation benefits with XOR-XNOR pass-transistor logic (PTL)
S. Arora, S. Tripathi
semanticscholar   +1 more source

Physical Properties

Cotton and Flax Fibre-Reinforced Geopolymer Composites, 2021
3M ™ Novec ™ 1230 Fire Protection Fluid is a next-generation halon alternative offering outstanding performance, large margin of safety, and an excellent environmental profile.
I. Low, T. Alomayri, Hasan Assaedi
semanticscholar   +1 more source

A novel gate driver circuit for depletion‐mode a‐IGZO TFTs

Journal of the Society for Information Display, 2019
In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a‐InGaZnO thin‐film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by
Jongsu Oh, Kyung-Mo Jung, Jungwoo Lee, Eun Kyo Jung, J. Jeon, K. Park, Yong-Sang Kim   +6 more
semanticscholar   +1 more source

Simulation Study of a Novel Full Turn-On RC-IGBT With Ultralow Energy Loss

IEEE Electron Device Letters, 2019
A novel full turn-on RC-IGBT with ultralow energy loss is proposed and investigated by simulations. It features a “collector-side” semi-superjunction (CSJ) and a shorted collector trench (SCT).
Xiaohui Xu, Zhongjiang Chen
semanticscholar   +1 more source

Study of the depletion depth in a frontside biased CMOS pixel sensors

Journal of Instrumentation, 2019
Depletion of the sensitive volume for semiconductor based detectors is a key to achieve high performance. It is for instance required for charged particle detection in highly radiative environment and for X-ray spectroscopy.
J. Heymes, A. Dorokhov, M. Kachel, J. Baudot   +3 more
semanticscholar   +1 more source

Impact of Wave Function Penetration into Gate Oxide on Gate Capacitance and Threshold Voltage of n-Channel Double Gate Junction Less Transistor

2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE), 2018
The effect of wave function penetration into gate oxide for n-Channel Double Gate Junctionless Transistor had been studied in terms of quantum mechanically extracted gate capacitance and threshold voltage.
Md. Mohsinur Rahman Adnan, Mohammad Shahidur Rahman   +1 more
semanticscholar   +1 more source