Results 231 to 240 of about 223,887 (275)

Full depletion voltage and separation voltage for a double-sided microstrip detector

2015
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Maslov, N., Starodubtsev, O.
openaire   +1 more source

Low-solvation electrolytes for high-voltage sodium-ion batteries

Nature Energy, 2022
Yan Jin, P. Le, Peiyuan Gao, Yaobin Xu, B. Xiao, M. Engelhard, Xia Cao, T. Vo, Jiangtao Hu, L. Zhong, B. Matthews, Ran Yi, Chongmin Wang, Xiaolin Li, Jun Liu, Ji‐Guang Zhang   +15 more
semanticscholar   +1 more source

A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling

Journal of Computational Electronics, 2015
P. Pandey, R. Vishnoi, M. J. Kumar
semanticscholar   +2 more sources

Non-full depletion mode and its experimental realization of the lateral superjunction

International Symposium on Power Semiconductor Devices and IC's, 2018
Wentong Zhang, S. Pu, Chunlan Lai, L. Ye, Shikang Cheng, Sen Zhang, Boyong He, Zhuo Wang, X. Luo, M. Qiao, Zhaoji Li, Bo Zhang   +11 more
semanticscholar   +1 more source

Fully Lithiated LixTiO2-δ Layer Coated Separator for Securing a Lithium-less Anode in an Ester-Based Electrolyte.

ACS Nano
Ester-based electrolytes, known for their cost-effectiveness and wide voltage windows, face compatibility challenges with lithium metal (Li0), leading to irreversible decomposition and dendrite growth, which impede their application in high-energy ...
Baogang Zhao, Nuttapon Yodsin, Haoyu Ma, P. Maitarad, W. Limphirat, Zhuobin Han, Yinghao Zhou, Mengjia Yu, Kexin Liu, Bingqing Yan, Xiaoyang Zhao, Guorong Chen, Xin Feng, Rongrong Jia, Liyi Shi, Shuai Yuan, Y. Lv   +16 more
semanticscholar   +1 more source

Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon, 2021
Himanshi Awasthi, Vaibhav Purwar, Abhinav Gupta   +2 more
semanticscholar   +1 more source

Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion

Semiconductors (Woodbury, N.Y.), 2013
R. Pandey, Aloke K. Dutta
semanticscholar   +2 more sources

1-V Full-Swing Depletion-Load a-In–Ga–Zn–O Inverters for Back-End-of-Line Compatible 3D Integration

IEEE Electron Device Letters, 2016
Li-Jen Chi, Ming‐Jiue Yu, Yu-Hong Chang, T. Hou   +3 more
semanticscholar   +1 more source

E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown

International Electron Devices Meeting
This work presents an E-mode p-GaN gate punch-through HEMT (PT-HEMT) which could achieve repetitive non-destructive breakdown, addressing the long-standing issue in conventional GaN HEMTs—the lack of avalanche robustness. The PT-HEMT features an array of
Jingjing Yu, Junjie Yang, Yunhong Lao, Sihang Liu, Han Yang, Xuelin Yang, Maojun Wang, Kevin J. Chen, B. Shen, Jin Wei   +9 more
semanticscholar   +1 more source

Development of a Versatile Front-End Circuit for Silicon Sensors with a Wide Dynamic Range for High Energy Experiments

2025 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD)
We developed and evaluated a wide dynamic range readout circuit optimized for silicon sensors with large parasitic capacitance, using a single-channel configuration.
K. Yoda, T. Chujo, M. Inaba
semanticscholar   +1 more source