Micromachines, 2022 To utilize continuous ultralow intensity signals from oxide synaptic transistors as artificial synapses that mimic human visual perception, we propose strategic oxide channels that optimally utilize their advantageous functions by stacking two oxide ...
Ji Sook Yang +7 more
doaj +1 more source
High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display
Micromachines, 2022 In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time.
Rong Song +6 more
doaj +1 more source
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola +12 more
core +3 more sources
Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport [PDF]
, 1998 We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann ...
Andreou, Andreas G. +4 more
core +2 more sources
Complementary Symmetry Nanowire Logic Circuits: Experimental Demonstrations and in Silico Optimizations [PDF]
, 2008 Complementary symmetry (CS) Boolean logic utilizes both p- and n-type field-effect transistors (FETs) so that an input logic voltage signal will turn one or more p- or n-type FETs on, while turning an equal number of n- or p-type FETs off.
Heath, James R. +3 more
core +1 more source
Design and optimization of a novel 3D detector: The 3D-open-shell-electrode detector
AIP Advances, 2018 A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric ...
Manwen Liu, Jian Tan, Zheng Li
doaj +1 more source
Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells [PDF]
, 2005 A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction.
Atwater, Harry A. +2 more
core +1 more source
A 99%-efficiency GaN converter for 6.78 MHz magnetic resonant wireless power transfer system
The Journal of Engineering, 2014 The authors developed a high-efficiency gallium-nitride (GaN) Class-E converter for a 6.78 MHz magnetic resonant wireless power transfer system. A negative-bias gate driver circuit made it possible to use a depletion mode GaN high-electron-mobility ...
Yoshiyuki Akuzawa +3 more
doaj +1 more source
Characterization of Thin p-on-p Radiation Detectors with Active Edges
, 2016 Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C. +7 more
core +1 more source
Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
, 2006 We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes.
Baniecki +8 more
core +1 more source