Results 151 to 160 of about 1,415,967 (341)

Electrochemical Nitrate Reduction Reaction to Ammonia at Industrial‐Level Current Densities

Advanced Science, EarlyView.
This review starts from the mechanism and theoretical basis of electrochemical nitrate reduction reaction (NO3−RR), and systematically summarizes and discusses the design strategies of industrial‐level current density catalysts. In addition, the progress of industrial‐level NO3−RR‐based electrolyzers, including flow reactor and membrane electrode ...
Zhijie Cui, Honghai Wang, Chunli Li, Wenchao Peng, Jiapeng Liu   +4 more
wiley   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, EarlyView.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Combined BC/MD approach to the evaluation of damage from fast neutrons and its implementation for beryllium irradiation in a fusion reactor

, 2017
В. А. Бородин, P. Vladimirov
openalex   +2 more sources

Effects of Neutron Source Ratio on Nuclear Characteristics of D-D Fusion Reactor Blankets and Shields [PDF]

, 1978
Hideki Nakashima, Yasuyuki Nakao, Masao OHTA   +2 more
openalex   +1 more source

Prospect Toward Steady-State Helical Fusion Reactor Based on Progress of LHD Project Entering the Deuterium Experiment Phase

IEEE Transactions on Plasma Science, 2018
Y. Takeiri
semanticscholar   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Telescope-based cavity for negative ion beam neutralization in future fusion reactors

, 2018
D. Fiorucci, Ali Hreibi, Walid Chaibi
openalex   +2 more sources

Progress in the Conceptual Design of the Helical Fusion Reactor FFHR-d1

Journal of fusion energy, 2018
N. Yanagi, T. Goto, J. Miyazawa, H. Tamura, Y. Terazaki, S. Ito, Teruya Tanaka, H. Hashizume, A. Sagara   +8 more
semanticscholar   +1 more source

Advances in Thermoelectric Thin Films Grown by Atomic Layer Deposition: A Critical Review of Performance and Challenges

Advanced Energy Materials, EarlyView.
This review highlights the use of atomic layer deposition (ALD) for fabricating thermoelectric thin films with atomic‐scale control. Four material classes—chalcogenides, doped oxides, ternary oxides, and multilayered structures—are compared in terms of growth dynamics, structure–property relationships, and thermoelectric performance. The precise tuning
Jorge Luis Vazquez‐Arce, Dong‐Ho Shin, Shuyue Yao, Shiyang He, Kornelius Nielsch, Amin Bahrami   +5 more
wiley   +1 more source

Study of key techniques in the vacuum vessel assembly for the future fusion reactor

, 2020
Haibiao Ji
openalex   +1 more source