Results 261 to 270 of about 210,924 (322)

Highly Off‐Centering Cations in Pavonite‐Structured Ag1.75InSb5.75Se11 with Competitive Thermoelectric Performance

open access: yesAdvanced Functional Materials, EarlyView.
Off‐centering of cations in pavonite‐structured Ag1.75InSb5.75Se11 (AISS) breaks crystal symmetry, inducing Rashba‐like band splitting and high band degeneracy, thus enhancing Seebeck coefficients. Soft bonds between off‐centered cations and Se atoms increase phonon scattering, achieving low lattice thermal conductivity (0.22 W m−1K−1 at 723 K). Doping
Chenghao Xie   +7 more
wiley   +1 more source

Single-balloon Enteroscopy Assisted Endoscopic Retrograde Cholangiopancreatography with the Rendezvous Technique

open access: yesGE: Portuguese Journal of Gastroenterology, 2015
Teresa Pinto Pais   +7 more
doaj   +1 more source

The Gaia mission: science, organization and present status [PDF]

open access: bronze, 2007
L. Lindegren   +13 more
openalex   +1 more source

Control of Ferromagnetism of Vanadium Oxide Thin Films by Oxidation States

open access: yesAdvanced Functional Materials, EarlyView.
The nonstoichiometric VOx exhibits a distinct ferromagnetic hysteresis loop and demonstrates a high magnetic susceptibility (χ=dMdH$ = \frac{{dM}}{{dH}}\;$∼10). Micromagnetic simulations show the results of the “partial volume fraction ferromagnetic phase model” for VOx/Co/Pt structure.
Kwonjin Park   +9 more
wiley   +1 more source

Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour   +11 more
wiley   +1 more source

L and T dwarfs in Gaia/SIM [PDF]

open access: bronze, 2007
R. L. Smart   +3 more
openalex   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

Evaluating Gaia performances on eclipsing binaries. IV. Orbits and stellar parameters for SV Cam, BS Dra and HP Dra

open access: bronze, 2005
E. F. Milone   +6 more
openalex   +2 more sources

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