Results 221 to 230 of about 157,868 (337)

TOWARD RELATIVISTIC ORBIT FITTING OF GALACTIC CENTER STARS AND PULSARS [PDF]

open access: green, 2010
Raymond Angélil   +2 more
openalex   +1 more source

Transient Terahertz Oscillations During Photoinduced Polarization Topology Reconfiguration in Ferroelectric Superlattices

open access: yesAdvanced Science, EarlyView.
Terahertz resonances in crystalline heterostructures could close a spectral gap between conventional electronics and photonics while opening new windows on non‐equilibrium lattice dynamics. Femtosecond optical screening of the depolarization field in epitaxial PbTiO3/SrTiO3 superlattices launches a collective polar mode that oscillates near 1 THz and ...
Deepankar Sri Gyan   +13 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen   +8 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

open access: yesAdvanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner   +15 more
wiley   +1 more source

Ultrahigh-energy gamma-ray emission associated with black hole-jet systems. [PDF]

open access: yesNatl Sci Rev
Cao Z   +316 more
europepmc   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

open access: yesAdvanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim   +4 more
wiley   +1 more source

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