Results 221 to 230 of about 157,868 (337)
Transient Terahertz Oscillations During Photoinduced Polarization Topology Reconfiguration in Ferroelectric Superlattices
Advanced Science, EarlyView.Terahertz resonances in crystalline heterostructures could close a spectral gap between conventional electronics and photonics while opening new windows on non‐equilibrium lattice dynamics. Femtosecond optical screening of the depolarization field in epitaxial PbTiO3/SrTiO3 superlattices launches a collective polar mode that oscillates near 1 THz and ...Deepankar Sri Gyan, Hyeon Jun Lee, Xiangwei Guo, Youngjun Ahn, Samuel D. Marks, Mohammed H. Yusuf, Matthew Dawber, James M. Glownia, Diling Zhu, Takahiro Sato, Sanghoon Song, Haidan Wen, Jia‐Mian Hu, Paul G. Evans +13 morewiley +1 more sourceAg Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim +8 morewiley +1 more sourceEmergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds
Advanced Electronic Materials, EarlyView.Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT
Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian +15 morewiley +1 more sourceUltrahigh-energy gamma-ray emission associated with black hole-jet systems. [PDF]
Natl Sci RevCao Z, Aharonian F, Bai YX, Bao YW, Bastieri D, Bi XJ, Bi YJ, Bian WY, Bukevich AV, Cai C, Cao WY, Cao Z, Chang J, Chang JF, Chen A, Chen ES, Chen G, Chen HX, Chen L, Chen L, Chen MJ, Chen ML, Chen QH, Chen S, Chen SH, Chen SZ, Chen TL, Chen XB, Chen X, Chen Y, Cheng N, Cheng YD, Chu MC, Cui MY, Cui SW, Cui XH, Cui YD, Dai BZ, Dai HL, Dai Z, Luobu D, Diao YX, Dong XQ, Duan KK, Fan JH, Fan YZ, Fang J, Fang JH, Fang K, Feng CF, Feng H, Feng L, Feng S, Feng XT, Feng Y, Feng YL, Gabici S, Gao B, Gao CD, Gao Q, Gao W, Gao WK, Ge M, Ge TT, Geng L, Giacinti G, Gong G, Gou Q, Gu MH, Guo FL, Guo J, Guo XL, Guo YQ, Guo YY, Han YA, Hannuksela OA, Hasan M, He HH, He HN, He JY, He X, He Y, Hernández-Cadena S, Hou BW, Hou C, Hou X, Hu HB, Hu SC, Huang C, Huang DH, Huang J, Huang TQ, Huang WJ, Huang XT, Huang XY, Huang Y, Huang YY, Ji XL, Jia HY, Jia K, Jiang HB, Jiang K, Jiang XW, Jiang ZJ, Jin M, Kaci S, Kang MM, Karpikov I, Khangulyan D, Kuleshov D, Kurinov K, Li BB, Li C, Li C, Li D, Li F, Li H, Li H, Li J, Li J, Li K, Li L, Li RL, Li SD, Li TY, Li WL, Li XR, Li X, Li Y, Li Y, Li Z, Li Z, Liang EW, Liang YF, Lin SJ, Liu B, Liu C, Liu D, Liu DB, Liu H, Liu HD, Liu J, Liu JL, Liu JR, Liu MY, Liu RY, Liu SM, Liu W, Liu X, Liu Y, Liu Y, Liu YN, Lou YQ, Luo Q, Luo Y, Lv HK, Ma BQ, Ma LL, Ma XH, Mao JR, Min Z, Mitthumsiri W, Mou GB, Mu HJ, Neronov A, Ng KCY, Ni MY, Nie L, Ou LJ, Pattarakijwanich P, Pei ZY, Qi JC, Qi MY, Qin JJ, Raza A, Ren CY, Ruffolo D, Sáiz A, Semikoz D, Shao L, Shchegolev O, Shen YZ, Sheng XD, Shi Z, Shu FW, Song HC, Stenkin YV, Stepanov V, Su Y, Sun D, Sun H, Sun Q, Sun X, Sun Z, Tabasam NH, Takata J, Tam PHT, Tan HB, Tang Q, Tang R, Tang Z, Tian W, Tong C, Wan LH, Wang C, Wang G, Wang H, Wang J, Wang K, Wang K, Wang L, Wang L, Wang LY, Wang R, Wang W, Wang X, Wang XJ, Wang XY, Wang Y, Wang YD, Wang ZH, Wang ZX, Wang Z, Wei DM, Wei JJ, Wei YJ, Wen T, Weng SS, Wu CY, Wu HR, Wu QW, Wu S, Wu XF, Wu YS, Xi SQ, Xia J, Xia JJ, Xiang GM, Xiao DX, Xiao G, Xin YL, Xing Y, Xiong DR, Xiong Z, Xu DL, Xu RF, Xu RX, Xu WL, Xue L, Yan DH, Yan JZ, Yan T, Yang CW, Yang CY, Yang FF, Yang LL, Yang MJ, Yang RZ, Yang WX, Yang Z, Yao ZG, Ye XA, Yin LQ, Yin N, You XH, You ZY, Yu YH, Yuan Q, Yue H, Zeng HD, Zeng TX, Zeng W, Zeng X, Zha M, Zhang BB, Zhang BT, Zhang C, Zhang F, Zhang HF, Zhang HM, Zhang HY, Zhang JL, Zhang L, Zhang PF, Zhang PP, Zhang R, Zhang SR, Zhang SS, Zhang W, Zhang X, Zhang XP, Zhang Y, Zhang Y, Zhang ZP, Zhao J, Zhao L, Zhao LZ, Zhao SP, Zhao XH, Zhao Z, Zheng F, Zhong WJ, Zhou B, Zhou H, Zhou JN, Zhou M, Zhou P, Zhou R, Zhou XX, Zhou XX, Zhu BY, Zhu CG, Zhu FR, Zhu H, Zhu KJ, Zou YC, Zuo X. +316 moreeuropepmc +1 more sourceRobust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
Advanced Electronic Materials, EarlyView.A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo +4 morewiley +1 more source