Results 331 to 340 of about 272,374 (381)

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

Photonics Research, 2019
Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide ...
Xuanhu Chen, F. Ren, S. Gu, Jiandong Ye
semanticscholar   +1 more source

Deep-level defects in gallium oxide

Journal of Physics D: Applied Physics, 2020
As an ultrawide bandgap semiconductor, gallium oxide (Ga2O3) has superior physical properties and has been an emerging candidate in the applications of power electronics and deep-ultraviolet optoelectronics. Despite numerous efforts made in the aspect of
Zhengpeng Wang, Xuanhu Chen, F. Ren, S. Gu, Jiandong Ye   +4 more
semanticscholar   +1 more source

Copper indium gallium selenide based solar cells – a review

, 2017
Copper indium gallium selenide (CIGS) based solar cells are receiving worldwide attention for solar power generation. They are efficient thin film solar cells that have achieved 22.8% efficiency comparable to crystalline silicon (c-Si) wafer based solar ...
J. Ramanujam, U. Singh
semanticscholar   +1 more source

Gallium oxide solar-blind ultraviolet photodetectors: a review

Journal of Materials Chemistry C, 2019
This review introduces the developments in β-Ga2O3 materials growth and solar blind UV photodetectors in the last decade, summarizes their advantages and potential for improvement, and puts forward some suggestions for actual application requirements.
Jingjing Xu, Wei Zheng, Feng Huang
semanticscholar   +1 more source

Zinc and gallium diffusion in gallium antimonide

Physical Review B, 2007
Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. Accurate modeling of the experimental profiles by means of continuum theoretical calculations reveals that Zn diffusion proceeds via singly positively charged Zn interstitials ...
Hartmut Bracht, Eugene E. Haller, Kirsten Sunder, S. P. Nicols   +3 more
openaire   +2 more sources

ChemInform Abstract: SELF‐DIFFUSION OF GALLIUM IN GALLIUM ARSENIDE

Chemischer Informationsdienst, 1981
AbstractDie Selbstdiffusion von Ga in GaAs wird im Temp.‐Bereich 1025‐1100°C mit Hilfe von Radiotracertechniken (72Ga) untersucht.
Margaret Brown, Arthur F. W. Willoughby, H. D. Palfrey   +2 more
openaire   +3 more sources

Oxidation of Gallium-based Liquid Metal Alloys by Water.

Langmuir, 2020
Gallium alloys with other low melting point metals, such as indium or tin, to form room-temperature liquid eutectic systems. The gallium in the alloys rapidly forms a thin surface oxide when exposed to ambient oxygen.
M. Creighton, Michelle C. Yuen, M. Susner, Z. Farrell, B. Maruyama, C. Tabor   +5 more
semanticscholar   +1 more source

The Nature of the Gallium−Gallium Triple Bond

Journal of the American Chemical Society, 1998
To simulate and help interpret the nature of the newly synthesized Ga2R2Na2 molecule with bulky groups, ab initio and density functional quantum mechanical methods were applied to study the structures and bonding of the model [HGaGaH]2-, [H2GaGaH2]2-, and [H3CGaGaCH3]2- dianions, as well as the neutral Na2[H2GaGaH2], Na2[H3CGaGaCH3], Ga2H2, and Ga2H4 ...
Gregory H. Robinson, Roger S. Grev, Jiande Gu, Y. Xie, Paul von Ragué Schleyer, Jianrui Su, Henry F. Schaefer, Xiao-Wang Li   +7 more
openaire   +2 more sources

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Journal of Physics D: Applied Physics, 2018
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors.
Yuhao Zhang, A. Dadgar, T. Palacios
semanticscholar   +1 more source

Gaussian basis sets for use in correlated molecular calculations. IX. The atoms gallium through krypton

, 1993
Valence correlation consistent and augmented correlation consistent basis sets have been determined for the third row, main group atoms gallium through krypton.
A. Wilson, D. Woon, K. Peterson, T. H. Dunning   +3 more
semanticscholar   +1 more source