Results 211 to 220 of about 100,205 (262)
Some of the next articles are maybe not open access.
Study on the crack formation mechanism in nano-cutting of gallium arsenide
, 2021Chenghao Chen, M. Lai, F. Fang
semanticscholar +1 more source
Science, 2003
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
openaire +1 more source
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
openaire +1 more source
Aluminum Gallium Arsenide (AlxGa1-xAs)
1997Publisher Summary The aluminum gallium arsenide (AlxGa1-xAs) system is technologically one of the most important alloy systems, especially when combined with GaAs. It forms the basis of quantum-well, superlattice, and single-barrier device structures, which in turn have a significant effect on high-speed electro-optics.
O.J. GLEMBOCKI, KENICHI TAKARABE
openaire +1 more source
Gallium arsenide/aluminium gallium arsenide double heterostructure laser diodes
1999ABSTRACT GALLIUM ARSENIDE / ALUMINUM GALLIUM ARSENIDE DOUBLE HETEROSTRUCTURE LASER DIODES Gezer, Cem M.S., Department of Physics Supervisor: Prof. Dr. Ramazan Aydın January 1999, 63 pages GaAs/AlGaAs double heterostructure laser diodes consist of an active GaAs layer placed between two surrounding AlGaAs layers.
openaire +2 more sources
1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
openaire +1 more source
Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction
Optik (Stuttgart), 2019Z. A. Ansari +6 more
semanticscholar +1 more source
Gallium Arsenide Integrated Circuits
1994It has been seen in this chapter that the GaAs field effect transistor is playing an important role in the development of integrated circuits. Analogue microwave circuits fabricated on gallium arsenide have a performance which is unattainable using silicon.
openaire +1 more source