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Gallium arsenide electronics [PDF]
Physics in Technology, 1987 The use of GaAs as a semiconductor is still in its infancy. GaAs devices make possible many new applications and their impact will be far reaching.
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Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
Toxicology and Applied Pharmacology, 2004Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles.
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Gallium-arsenide diffused diodes
1959 International Electron Devices Meeting, 1959Small-area mesa-type gallium-arsenide diffused diodes for use as variable reactances are described. These devices have been made by the diffusion of zinc into n-type material with net impurity density ranging from 2.0 \times 10^{16} atoms/cm3through 1 \times 10^{18} atoms/cm3.
J. Lowen, J. Halpern, R.H. Rediker
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, 2016
For the first time, this work presents a novel combination of gallium arsenide phosphide (GaAsP) and indium gallium arsenide (InGaAs) as drain/channel and source materials, respectively, of tunnel field-effect transistor (TFET) for high-performance ultra-
Bhagwan Ram Raad +3 more
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For the first time, this work presents a novel combination of gallium arsenide phosphide (GaAsP) and indium gallium arsenide (InGaAs) as drain/channel and source materials, respectively, of tunnel field-effect transistor (TFET) for high-performance ultra-
Bhagwan Ram Raad +3 more
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, 2016
We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates.
Yu Han, Qiang Li, K. Lau
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We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates.
Yu Han, Qiang Li, K. Lau
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Piezoreflectivity of Gallium Arsenide
Physical Review B, 1971The response of the reflectivity spectrum of single-crystal gallium arsenide to uniaxial stress in the [001] and [111] directions was determined. Interband transitions were detected at 1.425 \ifmmode\pm\else\textpm\fi{}0.015, 1.76 \ifmmode\pm\else\textpm\fi{}0.02, 2.89, 3.12, and 4.5 eV.
Paul Handler, J. E. Wells
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MRS Proceedings, 1995
ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices ...
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ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices ...
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NORMAL VIBRATIONS IN GALLIUM ARSENIDE
Solid State Communications, 1963The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296°K. The frequencies of normal modes of vibration propagating in the [ ζ 00], [ ζζζ ], and [0 ζζ ] crystal directions have been determined with a precision of between 1 and 2·5 per cent.
G. Dolling, J.L.T. Waugh
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The passivity of gallium arsenide
Electrochimica Acta, 1971Abstract Both p- and n-type gallium arsenide in aqueous electrolytes display the phenomenon of passivity once sufficiently high prepassive cds are attained. This can be achieved for the n-type by illumination, whereby a transition is observed from hole-limited anodic dissolution to passive film formation as the light intensity is increased ...
W.W. Harvey, J. Kruger
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Magnetoresistance in Gallium Arsenide
Proceedings of the Physical Society, 1960The transverse magnetoresistance in n-type gallium arsenide has been studied as a function of impurity concentration and density of defects introduced by fast-neutron irradiation. The data are consistent with theoretical predictions based on mixed scattering and a spherical-energy-surface model.
J J Duga, R K Willardson
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