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a-Gallium Arsenide (a-GaAs) [PDF]
, 1999 Many studies have been devoted to crystalline gallium arsenide (c-GaAs) because of its many applications in devices, e.g., laser diodes and high-speed transistors. On the other hand, fewer studies have been done on amorphous GaAs (a-GaAs) which could be used in photovoltaic applications, nuclear particle detectors, and transistor devices.
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ChemInform Abstract: SELF‐DIFFUSION OF GALLIUM IN GALLIUM ARSENIDE
Chemischer Informationsdienst, 1981AbstractDie Selbstdiffusion von Ga in GaAs wird im Temp.‐Bereich 1025‐1100°C mit Hilfe von Radiotracertechniken (72Ga) untersucht.
Margaret Brown +2 more
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Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate
Thin Solid Films, 1977Abstract The infrared reflectance of a thin film of GaAs on a GaAs substrate was measured for several samples of the type n n + and n + n . The reflectance was analyzed to determine the carrier density and mobility of film and substrate and the thickness of the film.
J. W. Gibson, E.D. Palik, Ronald T. Holm
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Technology of gallium arsenide
Solid-State Electronics, 1960Abstract The steps in the preparation of the compound semiconductor gallium arsenide are described, from the treatment of the component elements to the zone purification and production of single crystals of the compound. The efficiency of zone refining and the influence of some impurities on the electrical properties of the material are discussed ...
W.R. Harding, J.T. Edmond, F.A. Cunnell
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Semiconducting and other major properties of gallium arsenide
, 1982This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material.
J. S. Blakemore
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Integration of boron arsenide cooling substrates into gallium nitride devices
Nature Electronics, 2021J. Kang +5 more
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, 2014
Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations.
Long Hu +4 more
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Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations.
Long Hu +4 more
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DNA detection using plasmonic enhanced near-infrared photoluminescence of gallium arsenide.
Analytical Chemistry, 2013Efficient near-infrared detection of specific DNA with single nucleotide polymorphism selectivity is important for diagnostics and biomedical research.
Longhua Tang +5 more
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Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications
IEEE Journal of Selected Topics in Quantum Electronics, 2021Paul A. Verrinder +9 more
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1999
Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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Regarding device applications, GaAs is currently one of the most versatile semiconductors in use [1-3]. From an aspect of the solid-state phySiCs, GaAs is extremely interesting as prototypal direct-band-gap semiconductor. A review of many phySiCal and semiconducting properties of GaAs has been given in Refs. [4–8].
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