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Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures
1990A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to ...
Hendriks, P. +4 more
openaire +1 more source
Semiconducting and other major properties of gallium arsenide
, 1982J. S. Blakemore
semanticscholar +1 more source

