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A gallium arsenide power rectifier
1960 International Electron Devices Meeting, 1960In this paper we will describe the fabrication of a gallium arsenide rectifier with a 10 ampere forward current capability, and reverse breakdowns of 40-100 volts. These units are fabricated by a manganese diffusion into gallium arsenide having a prediffusion carrier concentration of about 3 \times 10^{16} /cm3.
P. Kuznetzoff, L.D. Armstrong
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Effect of changing Gallium arsenide content on Gallium arsenide–polymer composite varistors
Journal of Physics and Chemistry of Solids, 2013Abstract GaAs–polymer composites have been prepared using the hot pressing method and their current–voltage characteristics have been studied. The results show that samples with GaAs content exceeding 50% of the whole composition have varistor behavior. They can be used to protect circuits from 60 V up to over 90 V voltages.
S. Mohammadi Aref +4 more
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Study on the crack formation mechanism in nano-cutting of gallium arsenide
, 2021Chenghao Chen, M. Lai, F. Fang
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Science, 2003
SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
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SURFACE SCIENCE The metal oxide semiconductor field-effect transistor (MOSFET) is made from silicon rather than GaAs, even though GaAs has a direct band gap and high carrier mobilities. The reason is that the insulating oxide layer that forms on the GaAs surface has a high density of states that “pin” the valence and conduction bands, rather than ...
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Electronics and Power, 1985
GaAs is a crystalline material in which electrons move five to six times faster than in silicon, making a GaAs semiconductor, in theory at least, superior to a silicon semiconductor. Japanese experience to date suggests that for GaAs to demonstrate this superiority, however, problems in crystal production and device fabrication must first be ...
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GaAs is a crystalline material in which electrons move five to six times faster than in silicon, making a GaAs semiconductor, in theory at least, superior to a silicon semiconductor. Japanese experience to date suggests that for GaAs to demonstrate this superiority, however, problems in crystal production and device fabrication must first be ...
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Investigation of aluminum gallium arsenide/gallium arsenide superlattices by atomic force microscopy
Analytical Chemistry, 1992We have analyzed AlGaAs/GaAs superlattices by imaging freshly cleaved, untreated sample cross sections with the atomic force microscope in air. We were also able to image the same superlattice on a sample cross section after etching it for 5 min in 0.1 M HCl.
Paul K. Hansma +4 more
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1993
Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
Joseph A. Stroscio, Randall M. Feenstra
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Publisher Summary This chapter discusses that among the III-V semiconductors, GaAs has been extensively studied with most of the effort to date focusing on the surface that can be prepared by cleavage. GaAs is of the zincblende structure that has fcc translational symmetry with a two atom basis; a Ga atom at (0, 0, 0) and an As atom at (1/4, 1/4, 1/4)
Joseph A. Stroscio, Randall M. Feenstra
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Magnetoresistance Effects in Gallium Arsenide
1958The Hall constant and resistivity of GaAs has been studied as a function of temperature and magnetic field strength, over the temperature range 1.6 °K and 360°K and for magnetic field strengths up to 10,000 oersteds. The specimens studied were n-type single crystals selected and cut from the large crystallites which appear in the slow solidification of
I. M. Ross, R. Broom, R. Barrie
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Recovery of Gallium and Arsenic from Gallium Arsenide Waste in the Electronics Industry
, 2012Gallium arsenide (GaAs) has both high saturated electron velocity and high electron mobility, making it useful as a semiconductor material in a variety of applications, including light-emitting diodes (LEDs), integrated circuits (ICs), and microwave ...
Wei-Ting Chen +3 more
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A Toxicochemical Review of Gallium Arsenide (Review Paper)
, 2012Gallium arsenide (GaAs) is extensively used in defence as a semiconductor material, in radar and in electronic warfare. However, its toxicity is still not well understood.
S. Flora, N. Dwivedi
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