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Photoluminescence of Gallium Arsenide
1976Gallium arsenide is a III–V semiconducting compound with spherically symmetric energy bands. The absolute minimum of the conduction band is located at the center of the Brillouin zone. The valence band has a typical semiconductor structure, consisting of three subbands characterized by different effective hole masses.
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Electron transport properties of gallium arsenide, gallium aluminum arsenide and indium phosphide [PDF]
, 1978 Abstract not available.
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Aluminum Gallium Arsenide (AlxGa1-xAs)
1997Publisher Summary The aluminum gallium arsenide (AlxGa1-xAs) system is technologically one of the most important alloy systems, especially when combined with GaAs. It forms the basis of quantum-well, superlattice, and single-barrier device structures, which in turn have a significant effect on high-speed electro-optics.
O.J. GLEMBOCKI, KENICHI TAKARABE
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Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide. [PDF]
, 1985 Abstract : The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital ...
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Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction
Optik (Stuttgart), 2019Z. A. Ansari +6 more
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