Results 121 to 130 of about 4,868 (256)
Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars. [PDF]
Sato SI +10 more
europepmc +1 more source
Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride
published_or_final_version ; Physics ; Doctoral ; Doctor of ...
openaire +2 more sources
Broadband Parametric Amplification in AlGaAs‐on‐Insulator Nanowaveguides
Harnessing the exceptional nonlinearity of AlGaAs‐on‐insulator nanowaveguides, four‐wave‐mixing parametric amplification achieves a record net on‐chip gain of 56 dB and a gain bandwidth exceeding 415 nm at telecom wavelengths. These results establish AlGaAsOI as a powerful platform for compact, high‐performance integrated nonlinear optical ...
Yanjing Zhao +6 more
wiley +1 more source
Direct Shear Stress Mapping Using a Gallium Nitride LED-Based Tactile Sensor. [PDF]
Dvořák N, Fazeli N, Ku PC.
europepmc +1 more source
Hole‐making strategy and machining parameters influence delamination and hole quality in S2‐glass and basalt FRP composites, which subsequently affet flexural performance. Improved hole integrity leads to enhanced structural performance during three‐point bending.
Sara Saeed Abdulrahman Eltahir +2 more
wiley +1 more source
Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Liu F +15 more
europepmc +1 more source
Palladium nanoparticles on gallium nitride as a Mott-Schottky catalyst for efficient and durable photoactivation of unactivated alkanes. [PDF]
Tan L +5 more
europepmc +1 more source
Boron neutron capture therapy (BNCT) requires key non‐negotiable technical criteria: megadose administration, precise tumor‐specific targeting, favorable biocompatibility, and sustained tumor retention. Overcoming these interconnected challenges fundamentally depends on biomolecular carriers, which are critical for translating the therapeutic potential
Chang Chen +6 more
wiley +1 more source
Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]
Haider F +7 more
europepmc +1 more source
Advances in Gate Dielectrics for 2D Electronics
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source

