Results 241 to 250 of about 314,945 (334)

Flexible ionic pressure sensors: From migration‐electronic mechanisms to emerging iontronic paradigms

InfoMat, Volume 8, Issue 3, March 2026.
Mechanisms, materials, structures, and applications of the FIPSs. Abstract Flexible ionic pressure sensors (FIPS) have emerged as promising candidates for bridging the gap between electronics and biologically compatible interfaces. Unlike previous reviews, which focused primarily on materials or devices, this review presents a classification of FIPS ...
Mengjie Wang, Yanan Ma, Jia Liu, Li Xu, Li Wen, Ranyun Wu, Yongfa Cheng, Liang Li, Siliang Wang, Yang Yue, Zhixiang Huang   +10 more
wiley   +1 more source

Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications

Laser &Photonics Reviews, Volume 20, Issue 6, 18 March 2026.
Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt, Daniel Pastor Abellán, Ryszard Piramidowicz   +2 more
wiley   +1 more source

Tunable Coupler–Augmented Microrings: Reconfigurable Q‐Factor Control for Foundry‐Scale Quantum Light Sources

Nanophotonics, Volume 15, Issue 6, 27 March 2026.
Scalable quantum photonics require robust realization of quantum light sources for foundry‐scale fabrication. An interferometrically coupled silicon nitride microring resonator enables post‐fabrication control of bus–ring coupling. Thermal phase shifters adjust the Q‐factor and the pair generation rate, revealing that optimal generation does not occur ...
Jan Heine, Juan Samuel Sebastián Durán Gómez, Michael Kues   +2 more
wiley   +1 more source

Epitaxial Lift‐Off Process for Triple‐Junction Solar Cells Using Internal Push–Pull Stressors

Progress in Photovoltaics: Research and Applications, Volume 34, Issue 3, Page 239-246, March 2026.
Epitaxial lift‐off of multijunction solar cells is achieved using internal push‐pull stressors to enable thin‐film release. An oxide sidewall protection layer ensures selective etching of the sacrificial layer while preventing damage to Al and P containing active layers.
Prabudeva Ramu, Arto Aho, Riku Isoaho, Antti Tukiainen, Jarno Reuna, Ville Polojärvi, Timo Aho, Turkka Salminen, Teemu Hakkarainen, Mircea Guina   +9 more
wiley   +1 more source

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 3, March 2026.
Vacancies in low‐dose ion‐implanted GaN are studied by positron annihilation. Depth profiles of the net donor concentration (ND) are close to those for implanted impurities, but ND is 2–3 times higher than concentrations of implanted ions. The origin of donor‐like defects is expected to be N‐vacancy‐related defects, and Ga‐vacancy‐type defects play a ...
Akira Uedono, Hiroko Iguchi, Masahiro Horita, Jun Suda, Kohei Shima, Shigefusa F. Chichibu, Shoji Ishibashi   +6 more
wiley   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

Structure‐Property‐Application Correlations of Early Transition Metal Chalcogenides: A Dichalcogenide‐Centered Perspective

Small, Volume 22, Issue 18, 25 March 2026.
ETM‐based chalcogenides exhibit rich structural diversity and tunable electronic and catalytic properties. This review critically summarizes structure–property–application relationships in ETM‐based chalcogenides, highlighting recent advances in electronic devices, electrocatalysis, and energy‐related applications, while outlining key challenges and ...
Sachin Jaidka, Aayush Gupta, Daksh Shelly, Yashpreet Kaur, Anushka Garg, Seul‑Yi Lee, Soo‑Jin Park   +6 more
wiley   +1 more source

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling

Small, Volume 22, Issue 17, 20 March 2026.
AI‐enabled semiconductor scaling law. Virtualization emerges as an AI‐enabled scaling law for semiconductors, where progress depends on replacing physical iteration with credible virtual evidence. Surrogate modeling accelerates design‐space exploration, digital twins virtualize process learning, and defect‐to‐reliability inference advances ...
Zeheng Wang, Xinghuan Chen, Fanfan Lin, Xinze Li, Fangzhou Wang, Songnan Guo, Simin Yu, Liang Li, Jing‐Kai Huang   +8 more
wiley   +1 more source

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Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Advances in Materials, 2023
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices ...
Junting Chen, Junlei Zhao, S. Feng, Li Zhang, Yan Cheng, Hang Liao, Zheyang Zheng, Xiaolong Chen, Zhen Gao, Kevin J. Chen, M. Hua   +10 more
semanticscholar   +1 more source