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Molecular Simulation, 2022
We, the Editor and Publisher of the journal Molecular Simulation, have retracted the following article: Dmitry Olegovich Bokov, Abduladheem Turki Jalil, Forat H. Alsultany, Mustafa Z. Mahmoud, Wanich Suksatan, Supat Chupradit, Maytham T. Qasim & Parvaneh
Dmitry Olegovich Bokov +7 more
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We, the Editor and Publisher of the journal Molecular Simulation, have retracted the following article: Dmitry Olegovich Bokov, Abduladheem Turki Jalil, Forat H. Alsultany, Mustafa Z. Mahmoud, Wanich Suksatan, Supat Chupradit, Maytham T. Qasim & Parvaneh
Dmitry Olegovich Bokov +7 more
semanticscholar +1 more source
High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate.
ACS Applied Materials and Interfaces, 2021Strain-adjusting the band gap of MoS2 using patterned substrates to improve the photoelectric performance of MoS2 has gradually become a research hotspot in recent years.
Xinke Liu +7 more
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Vacuum, 2021
A novel gallium nitride (GaN) monolayer was investigated and predicted for the application in optoelectronic devices by first-principles calculations.
Kun Du, Zhihua Xiong, L. Ao, L. Chen
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A novel gallium nitride (GaN) monolayer was investigated and predicted for the application in optoelectronic devices by first-principles calculations.
Kun Du, Zhihua Xiong, L. Ao, L. Chen
semanticscholar +1 more source
Investigation of vibration-assisted nano-grinding of gallium nitride via molecular dynamics
, 2021The main goal of the surface machining of gallium nitride (GaN) is to obtain higher removal rate and good surface quality. Thus, we attempted to investigate the impact of the one-dimension sinusoidal assistant vibration on the nano-grinding of GaN by ...
Yuhua Huang +3 more
semanticscholar +1 more source
Ceramics International, 2021
A diamond conical indenter with the cone angle of 60o and a tip arc radius of 5μm was used to perform the gradual loading scribing experiments on gallium nitride (0001) crystal plane along the [ [11] , [12] , [13] , [14] , [15] , [16] , [17] , [18] , [19]
Qianqing Jiang +2 more
semanticscholar +1 more source
A diamond conical indenter with the cone angle of 60o and a tip arc radius of 5μm was used to perform the gradual loading scribing experiments on gallium nitride (0001) crystal plane along the [ [11] , [12] , [13] , [14] , [15] , [16] , [17] , [18] , [19]
Qianqing Jiang +2 more
semanticscholar +1 more source
Gallium Nitride –Based Photodiode: A review
, 2021This paper shows Gallium Nitride material based photodiode as an overview to use it with different layer thickness in order to detect multi-spectral ranges and to obtain high performance, high responsivity, high speed and low cost optoelectronic devices.
Haneen D. Jabbar +2 more
semanticscholar +1 more source
, 2021
Single crystal gallium nitride will produce subsurface damage during processing, and studying the total stress field during scratching gallium nitride is advantageous for predicting and controlling subsurface damage.
Qianqing Jiang +2 more
semanticscholar +1 more source
Single crystal gallium nitride will produce subsurface damage during processing, and studying the total stress field during scratching gallium nitride is advantageous for predicting and controlling subsurface damage.
Qianqing Jiang +2 more
semanticscholar +1 more source
Semiconductor Science and Technology, 2013
In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J ...
Siddharth Rajan, Debdeep Jena
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In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J ...
Siddharth Rajan, Debdeep Jena
openaire +1 more source
Reduced graphene oxide/gallium nitride nanocomposites for supercapacitor applications
Journal of Physics and Chemistry of Solids, 2020Reduced graphene oxide/gallium nitride (RGO–GaN) nanocomposites were synthesized by a facile single-step chemical reduction process with variation in the concentration of GaN from GaN1%@RGO–GaN to GaN20%@RGO–GaN.
Sumitra Nongthombam +7 more
semanticscholar +1 more source