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, 2020
Piezoelectric materials are promising for pressure sensors in a variety of industrial applications such as automotive and petroleum fields. Typical piezoelectric sensors rely heavily on lead zirconate titanate (Pb[ZrxTi1-x]O3, PZT) transducers.
Nam-In Kim +12 more
semanticscholar +1 more source
Piezoelectric materials are promising for pressure sensors in a variety of industrial applications such as automotive and petroleum fields. Typical piezoelectric sensors rely heavily on lead zirconate titanate (Pb[ZrxTi1-x]O3, PZT) transducers.
Nam-In Kim +12 more
semanticscholar +1 more source
Single-crystal gallium nitride nanotubes
Nature, 2003Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure.
Joshua, Goldberger +6 more
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Enlightening gallium nitride-based UV photodetectors
, 2020This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for highly efficient ultraviolet (UV) photodetection devices.
Neha Aggarwal, Govind Gupta
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Radiation hardness of gallium nitride
IEEE Transactions on Nuclear Science, 2002Gallium nitride (GaN) light emitting diodes (LEDs) were irradiated at room temperature with electrons in the range 300-1400 keV. A threshold energy of 440 keV was observed, corresponding to a gallium atom displacement energy of 19/spl plusmn/2 eV. This value of the displacement energy compares with that of silicon carbide but is smaller than that of ...
Ionascut-Nedelcescu, A. +5 more
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, 2020
Growth of gallium nitride pyramids was carried out on few layer graphene substrates with different growth parameters such as growth time and precursor-to-substrate distance.
S. Sanjay, K. Prabakaran, K. Baskar
semanticscholar +1 more source
Growth of gallium nitride pyramids was carried out on few layer graphene substrates with different growth parameters such as growth time and precursor-to-substrate distance.
S. Sanjay, K. Prabakaran, K. Baskar
semanticscholar +1 more source
Single gallium nitride nanowire lasers
Nature Materials, 2002There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency ...
Justin C, Johnson +5 more
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Journal of The Electrochemical Society, 1971
The thermal decomposition of a gallium tribromide‐ammonia complex in an ammonia, argon, or nitrogen atmosphere has been used for the deposition of gallium nitride films on silicon and hexagonal silicon carbide substrates in a gas flow system. The substrate temperature and the nature of the ambient are the most important parameters of the deposition ...
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The thermal decomposition of a gallium tribromide‐ammonia complex in an ammonia, argon, or nitrogen atmosphere has been used for the deposition of gallium nitride films on silicon and hexagonal silicon carbide substrates in a gas flow system. The substrate temperature and the nature of the ambient are the most important parameters of the deposition ...
openaire +1 more source
ACS Nano, 2015
III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN ...
Xiang, Zhou +5 more
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III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN ...
Xiang, Zhou +5 more
openaire +2 more sources
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Journal of Physics D: Applied Physics, 2018Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors.
Yuhao Zhang, A. Dadgar, T. Palacios
semanticscholar +1 more source
Nanocrystalline Gallium Nitride from Gallium Azide Precursors
MRS Proceedings, 1997ABSTRACTHigh quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized using the thermally induced explosion of the molecular precursor (Et3N)Ga(N3)3. The method allows the control of the particle size from 2 to 24 nm.
A. H. Manz +4 more
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