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, 2020
During the last few years and with the commercialization of the gallium nitride based high electron mobility transistor, research effort on gallium nitride has been strongly increasing.
Kevin Dannecker, J. Baringhaus
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During the last few years and with the commercialization of the gallium nitride based high electron mobility transistor, research effort on gallium nitride has been strongly increasing.
Kevin Dannecker, J. Baringhaus
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Gallium adsorption onto (112̄0) gallium nitride surfaces
Journal of Applied Physics, 2004We report on a systematic study of transients in reflection high energy electron diffraction specular intensities due to adsorption and subsequent desorption of gallium onto (112̄0) GaN surfaces both during the gallium adsorption by itself or during the growth of GaN by plasma-assisted molecular beam epitaxy. We determined the boundaries between N-rich
M. McLaurin +3 more
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Photoelectrochemical mechanical polishing method for n-type gallium nitride
CIRP annals, 2019A novel polishing method, photoelectrochemical mechanical polishing (PECMP), is proposed for finishing the n-type gallium nitride semiconductor wafers. The method applies the ultraviolet-light irradiation to a wafer surface to generate unpaired electron ...
Z. Dong +6 more
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Introduction to Gallium Nitride Properties and Applications
Nitride Semiconductor Technology, 2020popular foreign substrates: sapphire (Al 2 O 3 ), silicon (Si), and silicon carbide (SiC).
F. Roccaforte, M. Leszczynski
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Triangular gallium nitride nanorods
Applied Physics Letters, 2003Gallium nitride nanorods were synthesized by a chemical vapor deposition using the reaction of gallium/gallium nitride with ammonia. All nanorods have, exclusively, a triangle cross section with an average diameter of 50 nm. They consist of single-crystalline wurtzite structure crystal grown with the [010] direction.
Seung Yong Bae +5 more
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Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride
2022The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN).
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High-confinement gallium nitride-on-sapphire waveguides for integrated nonlinear photonics.
Optics Letters, 2019We demonstrate a highly effective nonlinearity of 7.3 W-1 m-1 in a high-confinement gallium nitride-on-sapphire waveguide by performing four-wave mixing characterization at telecom wavelengths. Benefitting from a high-index-contrast waveguide layout, we
E. Stassen +5 more
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Photoemission from gallium nitride
Technical Physics Letters, 2004We have studied the possibility of obtaining a high-response photocathode based on Mg-doped p-GaN layers grown by metalorganic vapor phase epitaxy.
M. R. Ainbund +4 more
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2015
GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara
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Strained gallium nitride nanowires
The Journal of Chemical Physics, 2002Gallium nitride nanowires were synthesized on silicon substrates by chemical vapor deposition using the reaction of gallium and gallium nitride mixture with ammonia. Iron nanoparticles were used as catalysts. The diameter of nanowires is uniform as 25 nm and the lengths are 20–40 μm.
Hee Won Seo +5 more
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