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Gallium nitride-based complementary logic integrated circuits
Nature Electronics, 2021Zheyang Zheng +9 more
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Integration of boron arsenide cooling substrates into gallium nitride devices
Nature Electronics, 2021J. Kang +5 more
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Electrostriction in gallium nitride
Applied Physics Letters, 1999Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2.
I. L. Guy, S. Muensit, E. M. Goldys
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Hydrogenation of Gallium Nitride
MRS Proceedings, 1993AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation
M. S. Brandt +4 more
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2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2002
In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities.
R. Borges +5 more
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In this paper we report on the development of GaN grown directly on standard Si wafers. Using a transition layer scheme, which addresses both the thermal expansion and lattice mismatch in this material system, excellent epitaxial film quality has been demonstrated, as evidenced by 2DEG electron mobilities.
R. Borges +5 more
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European gallium nitride capability
2015 IEEE Radar Conference (RadarCon), 2015Gallium nitride (GaN) provides clear advantages over other technologies such as gallium arsenide (GaAs) for high power solid state radio frequency (RF) applications. However Europe is currently reliant on other countries, in particular the US, for GaN components and systems.
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Luminescent properties of gallium nitride and gallium-aluminum nitride
Journal of Applied Spectroscopy, 1991A. V. Dobrynin +2 more
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
1998
Abstract : Gallium Nitride (GaN), a direct bandgap semiconductor, has a room temperature energy gap (Eg) of 3.39 eV. It forms a completely miscible solution with In (which decreases Eg) and Al (which increases Eg). Thus, light output wavelength can be tuned via bandgap engineering or via the introduction of appropriate impurities to form luminescent ...
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Abstract : Gallium Nitride (GaN), a direct bandgap semiconductor, has a room temperature energy gap (Eg) of 3.39 eV. It forms a completely miscible solution with In (which decreases Eg) and Al (which increases Eg). Thus, light output wavelength can be tuned via bandgap engineering or via the introduction of appropriate impurities to form luminescent ...
openaire +1 more source