Results 91 to 100 of about 10,665 (250)

Oxide Interface of Gallium‐Based Liquid Metals: Beneficial Bridge or Hidden Risk?

ChemistryEurope
Oxide interfaces in gallium‐based liquid metals (Ga‐based LMs) are of paramount importance, given their substantial influence on the material properties and performance across a range of applications.
Yi Fan, Shuai Wang, Xu Hou
doaj   +1 more source

Ab initio study of gallium-doped zinc oxides and zinc-doped gallium oxides

Journal of Physics: Conference Series
Abstract This study utilizes ab initio methods to investigate the atomic structures of gallium-doped zinc oxides and zinc-doped gallium oxides, focusing on the mechanisms of ZnGa2O4 film formation through doping and substitution. Utilizing X-ray diffraction and bond length assessments, we investigate the interaction between zinc oxide ...
Cheng-Lung Yu, Jian-Sheng Xie Su, Hsiang-Yu Hsieh, Po-Liang Liu   +3 more
openaire   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Pulsed Laser‐Assisted Phase Engineering of Multimetallic Colloidal Nanocrystals With Complex Compositions

Advanced Materials, EarlyView.
The engineering of colloidal nanocrystals with complex compositions has emerged as a highly active area of research within nanomaterials science. This review covers key aspects of colloidal solid‐solution nanocrystal formation using pulsed laser irradiation.
Marina T. Candela, Sergio Triviño‐Sánchez, Andrés Guerrero‐Martínez, Luis M. Liz‐Marzán, Guillermo González‐Rubio   +4 more
wiley   +1 more source

Advances in Gallium Oxide: Properties, Applications, and Future Prospects

Advanced Electronic Materials
The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state‐of‐the‐art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC).
Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul   +2 more
doaj   +1 more source

Effect of phosphorus and gallium on oxidation resistance of Sn-0.7Cu brazing metal: First-principle calculation and experimental verification

Journal of Materials Research and Technology
In this paper, the mechanism of the effect of phosphorus and gallium on the oxidation resistance of Sn-0.7Cu brazing alloy was studied based on the calculation of first principles. The calculation shows that the control principle of the anti-oxidation of
Lingyue Wang, He Wei, Chen Liu, Shiyu Yang, Zulai Li, Min Zha   +5 more
doaj   +1 more source

Laplace‐Pressure‐Stabilized Rutile Solid‐Solution Catalysts for Acidic Water Oxidation: Enabling DSA‐Inspired Compositions

Advanced Materials, EarlyView.
The miscibility of foreign elements in rutile‐type IrO2 and SnO2 is greatly enhanced under high Laplace pressure, where their crystal size is reduced to the nanoscale. This enhancement leads to the successful synthesis of DSA‐composition solid‐solution nanocatalysts with notable durability during the acidic OER in water electrolysis.
Chang Hyun Park, Juneseo Ahn, Dongho Kim, Hyeonsoo Wi, Ki Hyun Park, Jun Seop Kim, Sangmyeong Lee, Sung‐Yoon Chung   +7 more
wiley   +1 more source

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source