Results 171 to 180 of about 1,376,697 (345)

High resolution reactive ion etching of GaN and etch-induced effects [PDF]

, 1999
Rebecca Cheung, Roger J. Reeves, B. Rong, S. A. Brown, E. J. M. Fakkeldij, E. van der Drift, M. Kamp   +6 more
openalex   +1 more source

AI‐Driven Defect Engineering for Advanced Thermoelectric Materials

Advanced Materials, EarlyView.
This review presents how AI accelerates the design of defect‐tuned thermoelectric materials. By integrating machine learning with high‐throughput data and physics‐informed representations, it enables efficient prediction of thermoelectric performance from complex defect landscapes.
Chu‐Liang Fu, Mouyang Cheng, Nguyen Tuan Hung, Eunbi Rha, Zhantao Chen, Ryotaro Okabe, Denisse Córdova Carrizales, Manasi Mandal, Yongqiang Cheng, Mingda Li   +9 more
wiley   +1 more source

Some Remarks on the Plant Layout of Höganäs Sponge Iron Process

, 1962
Yoshikazu Yamamichi
openalex   +2 more sources

Smooth n-type GaN surfaces by photoenhanced wet etching [PDF]

, 1998
C. Youtsey, I. Adesida, Lucia Romano, G. E. Bulman   +3 more
openalex   +1 more source

Fluoroether Design Enables High‐Voltage All‐Solid‐State Lithium Metal Batteries

Advanced Materials, EarlyView.
A durable high‐voltage all‐solid‐state electrolyte is developed by incorporating a novel organic/inorganic hybrid porous component with a fluoroether design. Due to the weakened Li+ coordination structure, the proposed high‐voltage SSE exhibits durable antioxidation.
Yong Chen, Xu Yang, Tianyi Wang, Xiao Tang, Dongfang Li, Shijian Wang, Yaojie Lei, Yu Han, Shimou Chen, Michel Armand, Doron Aurbach, Guoxiu Wang   +11 more
wiley   +1 more source

Kết quả điều trị nang ống mật chủ bằng phẫu thuật nội soi cắt nang, nối ống gan chung hỗng tràng kiểu Roux-en-Y

, 1970
Phạm Duy Hiền, Nguyễn Thanh Liêm, Vũ Mạnh Hoàn   +2 more
openalex   +2 more sources

300°C GaN/AlGaN Heterojunction Bipolar Transistor [PDF]

, 1998
F. Ren, C. R. Abernathy, J. M. Van Hove, P. P. Chow, R. Hickman, JJ Klaasen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, Jung Han, R. J. Shul, Albert G. Baca, S. J. Pearton   +14 more
openalex   +1 more source

Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy [PDF]

, 1997
G. Y. Zhang, Yuzhen Tong, Zhihui Yang, Shuoxue Jin, J. Li, Z. Z. Gan   +5 more
openalex   +1 more source

Surface Properties of p‐GaN and Formation of Nickel Metal Contacts

Advanced Materials Interfaces, EarlyView.
The amount of C, O, and Mg–O bonds on the surface of p‐GaN can be reduced while still maintaining the surface morphology by potassium hydroxide (KOH) wet chemical treatment. Heating this surface with Ni on top in ultra‐high vacuum (UHV) results in a crystalline Ga‐Ni alloy and diffusion of Ga, which creates vacancies close to valence band leading to ...
Mikko Miettinen, Vesa Nuutila, Zahra Jahanshah Rad, Masoud Ebrahimzadeh, Anni Ruokonen, Risto Punkkinen, Juha‐Pekka Lehtiö, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Sami Suihkonen, Hele Savin, Weimin Wang   +12 more
wiley   +1 more source

Correlation between the surface defect distribution and minority carrier transport properties in GaN [PDF]

, 1998
P. M. Bridger, Zvonimir Bandić, E. C. Piquette, T. C. McGill   +3 more
openalex   +1 more source