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Predicting drug-target interactions using machine learning with improved data balancing and feature engineering. [PDF]
Sci RepTalukder MA, Kazi M, Alazab A.
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Crystallographic Engineering of CrN Buffer Layers for GaN Thin Film Epitaxy. [PDF]
Materials (Basel)Shim KY +6 more
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Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Japanese Journal of Applied Physics, 2003GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy.
Takashi Kobayashi +4 more
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2021
Generative modeling has been around for a few decades, but much of the field didn’t start to recognize itself without the discovery of the generative adversarial network (GAN). There is some debate on when GANs were discovered and by whom. One thing is for certain: Ian Goodfellow and his colleagues from the University of Montreal in 2014 deserve a good
openaire +2 more sources
Generative modeling has been around for a few decades, but much of the field didn’t start to recognize itself without the discovery of the generative adversarial network (GAN). There is some debate on when GANs were discovered and by whom. One thing is for certain: Ian Goodfellow and his colleagues from the University of Montreal in 2014 deserve a good
openaire +2 more sources
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
IEEE Electron Device Letters, 2019In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate. A major benefit of such epi-structure is that it contains both a 2-dimensional electron gas (2-DEG) and a 2-dimensional hole gas (2-DHG), hence making ...
Chowdhury, Nadim +10 more
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Characteristics of GaN and AlGaN/GaN FinFETs
Solid-State Electronics, 2014AlGaN/GaN FinFETs, with high quality atomic layer deposited (ALD) Al2O3 gate dielectric, have been fabricated. The devices have a two-dimensional electron gas (2DEG) channel formed at AlGaN/GaN heterointerface and two sidewall GaN MOS channels. Two distinct transconductance peaks can be observed, one for the 2DEG channel and the other for the sidewall ...
Im, Ki-Sik +6 more
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Growth of GaN Nanowires on Epitaxial GaN
Journal of Electronic Materials, 2008We report experiments on the formation of GaN nanowires on epitaxial GaN using thin layers of Ni. GaN covered with Ni shows roughening that is strongly dependent on the thickness of the Ni layer and the annealing conditions. With the initial Ni thickness of 0.8 nm we observe formation of Ni-filled antidots.
G. Kipshidze +8 more
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Journal of Luminescence, 1971
Light-emitting diodes of GaN have been made, which can generate CW light over any portion of the visible spectrum and in the near ultraviolet. External power efficiencies of the order of 10−4 can be obtained at room temperature. Annealing treatments of Zn-doped insulating GaN greatly increase the emission efficiency.
J.I. Pankove +3 more
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Light-emitting diodes of GaN have been made, which can generate CW light over any portion of the visible spectrum and in the near ultraviolet. External power efficiencies of the order of 10−4 can be obtained at room temperature. Annealing treatments of Zn-doped insulating GaN greatly increase the emission efficiency.
J.I. Pankove +3 more
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Epitaxial Al/GaN and Au/GaN junctions on as‐grown GaN(0001)1 × 1 surfaces
physica status solidi (a), 2005AbstractGaN(0001) epilayers were fabricated by rf‐plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 × 2 reconstruction of the Ga‐face during growth and the 1 × 1 reconstruction upon cooling. On such surfaces, Al/n‐GaN and Au/n‐GaN junctions
D. Orani +10 more
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