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Cleaved Facets in Gan by Wafer Fusion of Gan to Inp
MRS Proceedings, 1996AbstractBasal plane sapphire is a common substrate for the heteroepitaxy of GaN. This presents a challenge for fabrication of cleaved facet GaN lasers because the natural cleavage planes in (0001) α-A12O3 are not perpendicular to the wafer surface. This paper describes a method for achieving perpendicular cleaved facets through wafer fusion that can ...
John E. Bowers +9 more
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High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
Applied Physics Letters, 1996Platinum (Pt) and palladium (Pd) Schottky diodes on n-type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode ...
M. A. Khan +4 more
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Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT
2012 15th International Workshop on Computational Electronics, 2012Electrical reliability of the AlGaN/GaN material system in both the on and off state regimes is a fundamental problem to be solved before the widespread use of this technology. The two major reliability concerns in this technology is electric field induced strain degradation also known as electromechanical coupling and current collapse mechanism.
Dragica Vasileska +2 more
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Piezoresistive effect in GaN–AlN–GaN structures
Applied Physics Letters, 1997We report on a high sensitivity of GaN–AlN–GaN semiconductor–insulator–semiconductor structures grown on sapphire to an applied strain. The measured static gauge factor (GF) is almost twice as large as the GF for n-type SiC films. We link the observed magnitude and sign of the gauge factor to the crystalline structure of the GaN and AlN films and to ...
R. Gaska +5 more
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Limiting factors of GaN-on-GaN LED
Semiconductor Science and Technology, 2021M E A Samsudin +7 more
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2018
A recently celebrated kind of deep neural networks is Generative Adversarial Networks. GANs are generators of samples from a distribution that has been learned; they are up to now centrally trained from local data on a single location. We question the performance of training GANs using a spread dataset over a set of distributed machines, using a gossip
Hardy, Corentin +2 more
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A recently celebrated kind of deep neural networks is Generative Adversarial Networks. GANs are generators of samples from a distribution that has been learned; they are up to now centrally trained from local data on a single location. We question the performance of training GANs using a spread dataset over a set of distributed machines, using a gossip
Hardy, Corentin +2 more
openaire +1 more source
GaN on GaN Crystals for Power Device Applications
The Journal of the Institute of Electrical Engineers of Japan, 2017openaire +2 more sources