Results 1 to 10 of about 28,769 (195)
Progress of optically pumped GaSb based semiconductor disk laser
Opto-Electronic Advances, 2018 This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently,
Shi-Li Shu, Feng Jian
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Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
Nanomaterials, 2018 Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C.
Evgeniy Chusovitin +2 more
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MOCVD Growth of GaSb and Al GaSb
Journal of Mathematical and Fundamental Sciences, 2019 . GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low
E. Sustini +3 more
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High Hole Mobility Polycrystalline GaSb Thin Films
Crystals, 2021 In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C.
Anya Curran +9 more
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Nanomaterials, 2021 From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji +2 more
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تبیین اندازهگیری و کاربرد ارزش منصفانه بر اساس بیانیه 72 هیئت استانداردهای حسابداری دولتی [PDF]
حسابداری و بودجهریزی بخش عمومی, 2021 اندازهگیری ارزش منصفانه و بکارگیری آن همواره یکی از موضوعات مهم بوده است. با انتشار استانداردهای بینالمللی گزارشگری مالی (IFRS)، موضوع ارزش منصفانه بیشتر مورد توجه قرار گرفت.
زینب رستمی +1 more
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Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality
Frontiers in Materials, 2021 Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate ...
Bing Yan +6 more
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ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›
Acta et Commentationes: Ştiinţe Exacte şi ale Naturii, 2020 Cunoașterea proprietăților fizice ale antimonidului de galiu (GaSb) este importantă datorită implementării crescânde a GaSb în multe aplicații optice și electronice.
Mariana OSIAC, Igor POSTOLACHI
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High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
IEEE Journal of the Electron Devices Society, 2021 In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates the ...
Sang-Hyeon Kim +11 more
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Frontiers in Physics, 2022 Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang +5 more
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