Results 91 to 100 of about 28,769 (195)

Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol

AIP Advances, 2016
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force ...
E. Papis-Polakowska, J. Kaniewski, J. Jurenczyk, A. Jasik, K. Czuba, A. E. Walkiewicz, J. Szade   +6 more
doaj   +1 more source

THE EMPLOYEE MOTIVATION – THE KEY FACTOR IN BUSINESS SUCCESS

International Journal of Innovative Technologies in Economy, 2018
We present you the work: “The Employee Motivation – the Key Factor in Business Success”, where we present the results of the research on this issue conducted by the universities of California and Stanford, based on which the author in cooperation with ...
Dzneladze L. T., Khachidze N. D.
doaj   +1 more source

The effects of electron and proton radiation on GaSb infrared solar cells [PDF]

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively.
Avery, J. E., Fraas, L. M., Gruenbaum, P. E.   +2 more
core   +1 more source

Theoretical studies of optically induced high spin polarization and cubic anisotropy in cubic semiconductors

Indonesian Journal of Applied Physics
Theoretical studies of optical spin polarization and cubic anisotropy in cubic semiconductors GaAs and GaSb are performed. We use Kane wave functions to calculate the eight-level transition matrix elements permitted by the optical selection rules.
M. Idrish Miah
doaj   +1 more source

Pre-epitaxial treatment of GaSb substrates for liquid-phase growth of homoepitaxial layers

Технологія та конструювання в електронній апаратурі, 2008
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered.
О. V. Andronova, V. V. Kurak
doaj  

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Advanced Materials Interfaces
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes.
Logan Riney, Seul‐Ki Bac, Maksym Zhukovskyi, Tatyana Orlova, Shelby S. Fields, Jiashu Wang, Tommy Kotte, David Graf, Steven P. Bennett, Xinyu Liu, Badih A. Assaf   +10 more
doaj   +1 more source

Growth of Au-seeded GaAs-GaSb nanowires explored in environmental TEM [PDF]

BIO Web of Conferences
Marnauza Mikelis, Sjökvist Robin, Kraina Azemina, Jacobsson Daniel, Dick-Thelander Kimberly   +4 more
doaj   +1 more source

The synthesis, electric and magnetic properties of films witH eftectic composition of GаSb-MnSb system

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the technology and electrical and magnetic properties study of eutectic GaSb-MnSb films are presented. Eutectic GaSb-MnSb films ranging in thickness from 80 to 130 nm have been grown on sapphire substrates by pulsed laser deposition using ...
S. F. Marenkin, O. A. Novodvorsky, V. V. Baranov, V. M. Trukhan, T. V. Shoukavaya, A. M. Struts   +5 more
doaj  

Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics. [PDF]

Light Sci Appl
Sa Z, Song K, Meng Y, Wu W, Wang Z, Li P, Zhang J, Zang Z, Wang G, Wang M, Jia Z, Tan Y, Li W, Yip S, Chen F, Ho JC, Yang ZX.   +16 more
europepmc   +1 more source

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design. [PDF]

Sci Rep
Saravanan M, Parthasarathy E, Rahi SB, Natarajan R.   +3 more
europepmc   +1 more source