Results 141 to 150 of about 28,769 (195)

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber. [PDF]

Nanomaterials (Basel)
Murawski K, Majkowycz K, Kopytko M, Manyk T, Dąbrowski K, Seredyński B, Kubiszyn Ł, Martyniuk P.   +7 more
europepmc   +1 more source

Predominant heterotrophic diazotrophic bacteria are involved in Sargassum proliferation in the Great Atlantic Sargassum Belt. [PDF]

ISME J
Léger-Pigout M, Navarro E, Ménard F, Ruitton S, Le Loc'h F, Guasco S, Munaron JM, Thibault D, Changeux T, Connan S, Stiger-Pouvreau V, Thibaut T, Michotey V.   +12 more
europepmc   +1 more source

Design and performance of GaSb-based quantum cascade detectors. [PDF]

Nanophotonics
Giparakis M, Windischhofer A, Isceri S, Schrenk W, Schwarz B, Strasser G, Andrews AM.   +6 more
europepmc   +1 more source

Enhanced spin Hall ratio in two-dimensional semiconductors. [PDF]

NPJ Comput Mater
Zhou J, Poncé S, Charlier JC.
europepmc   +1 more source

Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector. [PDF]

Sci Rep
Lee M, Ku Z, Jeong S, Hwang J, Lee J, Kim J, Kang SW, Urbas A, Bae H, Kim B.   +9 more
europepmc   +1 more source

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Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications

Optik, 2018
Abstract In this paper a GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure destined for thermo-photovoltaic applications at room temperature was fabricated by Molecular Beam Epitaxy (MBE) technique, in a Varian gen II solid-source machine. At direct bias, the J(V) characteristics of this structure in the dark and under light conditions, have been studied by ...
Meharrar, F.Z., Belfar, A., Aouad, I., Giudicelli, E., Cuminal, Y., Aït-Kaci, H.   +5 more
exaly   +2 more sources

Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures

Applied Physics Letters, 1990
Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb structures has been observed for the first time and shown to offer large peak-to-valley ratios at higher peak current densities than previous double-barrier and single-barrier polytype interband tunneling results.
K. F. Longenbach, L. F. Luo, W. I. Wang
exaly   +2 more sources

Single-junction GaSb and tandem GaSb/InGaAsSb and AlGaAsSb/GaSb thermophotovoltaic cells

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2002
The advanced technology of the single- and dual-junction TPV cells, based on GaSb was developed. Photocurrent density as high as 54 mA/cm/sup 2/ under AM0 spectrum, efficiencies of 12.8% (AM1.5D, 120 suns) and 19.1% under cut-off AM0-spectrum (/spl lambda/=900-1800 nm) were obtained.
V.M. Andreev, V.P. Khvostikov, V.D. Rumyantsev, S.V. Sorokina, M.Z. Shvarts   +4 more
openaire   +1 more source