Results 151 to 160 of about 28,769 (195)

GaSb-InAs-GaSb heterostructures studied under hydrostatic pressure

Physical Review B, 1987
We report transport measurements on GaSb-InAs-GaSb heterostructures under hydrostatic pressure (up to 1.2 GPa) and high magnetic field (up to 18 T) at low temperature. The pressure-induced decrease of the carrier concentrations is analyzed in terms of two distinct causes: an intrinsic charge transfer between the GaSb valence band and InAs conduction ...
, Beerens, , Grégoris, , Portal, , Mendez, , Chang, , Esaki   +5 more
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ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization

Journal of Applied Physics, 1994
Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by ...
A. Guivarc’h, Y. Ballini, Y. Toudic, M. Minier, P. Auvray, B. Guenais, J. Caulet, B. Le Merdy, B. Lambert, A. Regreny   +9 more
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Die binären eutektika GaSbGaV3Sb5 und GaSbV2Ga5

Solid State Communications, 1966
Zusammenfassung Praparation und Ergebnisse von metallographischen Untersuchungen der binaren Eutektika GaSb-GaV 3 Sb 5 und GaSb-V 2 Ga 5 werden beschrieben. Die eutektischen Konzentrationen sind 4,9 Gew.% GaV 3 Sb 5 und 4,4 Gew.% V 2 Ga 5 . Beide Eutektika konnen eine faserartige, polykristalline GaSb-Matrix bilden, deren Korner eine 〈110 ...
A. Müller, M. Wilhelm
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Growth and optimization of InAs/GaSb and GaSb/InAs interfaces

Applied Surface Science, 2000
Abstract In order to optimize the molecular beam epitaxy growth of indium arsenide–gallium antimonide structures, we study the effects of the stacking sequence of the interfacial monolayer and of the growth temperature. To this end, GaSb/InAs and InAs/GaSb heterojunctions involving ultra-thin epilayers have been fabricated at 350°C, 400°C and 450°C ...
A Tahraoui, P Tomasini, L Lassabatère, J Bonnet   +3 more
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Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017
Multi-junction cells using GaAs/GaSb interface misfit arrays for metamorphic growth can achieve comparable efficiency to conventional inverted metamorphic multijunction cells without the need for costly graded buffer layers. In this work, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare ...
George T. Nelson, Bor-Chau Juang, Steve Johnston, Michael A. Slocum, Zachary S. Bittner, Ramesh B. Lagumavarapu, Diana Huffaker, Seth M. Hubbard   +7 more
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Oscillatory behaviour in melting of a GaSb/InSb/GaSb system

Mechanics Research Communications, 2004
Abstract The effect of coexistence of Marangoni and natural convections was studied numerically in melting of a GaSb/InSb/GaSb sandwich sample. Fluid flow and concentration fields are oscillatory when the solutal natural convection coexists with the thermal Marangoni convection.
Y Okano, T Suzumura, S Sakai, Y Hayakawa, M Kumagawa, A Hirata, S Dost   +6 more
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Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb

Journal of Applied Physics, 1990
A new mechanism for negative differential resistance due to electron/light hole coupling has been observed using broken gap heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. The best peak-to-valley ratio is about 2:1 (3.7:1 at 77 K) for a GaSb layer width of 10 nm.
L. F. Luo, R. Beresford, K. F. Longenbach, W. I. Wang   +3 more
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Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy

Journal of Applied Physics, 1993
Successful growth by molecular beam epitaxy of YbSb2 (010) single crystal films on GaSb(001) has been demonstrated. The YbSb2 films have a room temperature resistivity equal to 40 μΩ cm. YbSb2 has a basal plane rectangular (but almost square) and nearly lattice matched to GaSb. The memory of the GaSb(001) surface orientation is transferred to the YbSb2
A. Guivarc’h, Y. Ballini, P. Auvray, J. Caulet, M. Minier, G. Dupas, G. Ropars   +6 more
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Optical Properties of InAs-GaSb and GaSb-AlSb Superlattices

1987
We review here some of the remarkable optical properties of two GaSb-based systems, the “type II” InAs-GaSb superlattices in which the electron and hole wave functions are spatially separated, and the strained-layer GaSb-AlSb superlattices where the ground valence state is the first light-hole state.
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GaSb–PbSe–GaSb double heterostructure midinfrared lasers

Applied Physics Letters, 1998
A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved.
openaire   +1 more source