Results 11 to 20 of about 28,769 (195)
Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy [PDF]
Advanced Materials, Volume 38, Issue 7, 2 February 2026.SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of complex epitaxial heterostructures composed of a type II superlattice and highly doped semiconductors. Both the geometrical parameters of the stack and the optical properties of the individual layers and of the interfaces are retrieved, as well
Laure Tailpied +8 more
wiley +2 more sources
Study of interface asymmetry in InAs–GaSb heterojunctions [PDF]
, 1995 We present reflection high energy electron diffraction, secondary ion mass spectroscopy, scanning tunneling microscopy and x‐ray photoelectron spectroscopy studies of the abruptness of InAs–GaSb interfaces.
Collins, D. A. +4 more
core +1 more source
اهمیت و کاربرد اطلاعات آیندهنگر در بخش دولتی و بازار سرمایه [PDF]
حسابداری و بودجهریزی بخش عمومی, 2020 در ایالات متحده، سه نوع دولت محلی، ایالتی و فدرال وجود دارد؛ دولتهای محلی و ایالتی از معیارهای هیئت استانداردهای حسابداری دولتی (GASB) و به خصوص مباحث بیانیههای 34 و 44 که شامل گزارش مالی جامع سالانه دولت (CAFR) میشود و دولت فدرال از معیارهای هیئت ...
کیومرث بیگلر +1 more
doaj
X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface [PDF]
, 1993 X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction.
Collins, D. A. +3 more
core +1 more source
Semiconductor Science and Technology, 1988 High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S +4 more
openaire +1 more source
بررسی دلایل نیاز به بازنگری در استانداردهای موجود هیئت استانداردهای حسابداری دولتی (GASB) [PDF]
حسابداری و بودجهریزی بخش عمومی, 2021 هیئت استانداردهای حسابداری دولتی، استانداردهایی را در جهت گزارشگری مالی دولتهای محلی و ایالتی وضع میکند. این استانداردها در جهات مختلف، راهنمایی برای دولتها است تا با استفاده از آن، امور و گزارشگری مالی خود را بهتر و کاراتر انجام دهند.
افشین شورج سمائی
doaj
Four-point probe resistivity noise measurements of GaSb layers [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020 This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described.
L. Ciura +3 more
doaj +1 more source
Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures [PDF]
, 2017 The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers.
Krishtopenko, S. S., Teppe, F.
core +2 more sources
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
AIP Advances, 2017 A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC.
Takahiro Gotow +6 more
doaj +1 more source
Nanoscale Research Letters, 2017 We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates.
Xianghai Ji, Xiaoguang Yang, Tao Yang
doaj +1 more source