Results 21 to 30 of about 28,769 (195)
GHz Compact Laser Enabled by GaSb Nanowires as Saturable Absorbers
Advanced Photonics Research, 2023 Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires (NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them ideal candidates for broadband optical modulation.
Yanxue Yin +7 more
doaj +1 more source
Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]
, 2016 Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B +12 more
core +1 more source
AIP Advances, 2017 We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment.
Yasushi Shoji +2 more
doaj +1 more source
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
Crystals, 2017 Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications.
Shouzhu Niu +6 more
doaj +1 more source
The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
doaj +1 more source
AIP Advances, 2023 Orientation-patterned gallium phosphide (OP-GaP) and orientation-patterned gallium antimonide (OP-GaSb) have demonstrated excellent potential for broadband second harmonic generation (SHG), with a wide range of fundamental wavelengths and temperature ...
Ruilin Hu, Qiang He
doaj +1 more source
Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection [PDF]
, 2018 High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e ...
Craig, Adam P. +5 more
core +1 more source
Tunnel switch diode based on AlSb/GaSb heterojunctions [PDF]
, 2000 We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system.
Barton, M. A. +4 more
core +1 more source
گزارشگری مالی بخش عمومی، ورای صورتهای مالی [PDF]
حسابداری و بودجهریزی بخش عمومی, 2020 گزارشگری مالی بعنوان محصول نهایی فرآیند حسابداری، تحت تأثیر ویژگیهایی ازجمله محیط فعالیت، نیازهای استفادهکنندگان و اهداف ذینفعان از اطلاعات مالی قرار دارد.
شعبان نظری
doaj
Spontaneous Breathing for Panendoscopy? Retrospective Cohort and Results of a French Practice Survey
OTO Open, 2022 Objective Avoiding tracheal intubation by using general anesthesia with spontaneous breathing (GASB) is attractive for upper airway panendoscopy. The aim of this study was to estimate the incidence of adverse events during panendoscopy under GASB and to ...
Pierre Habrial MD +7 more
doaj +1 more source