Results 31 to 40 of about 28,769 (195)
Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires
, 2016 The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the $8\times 8$ Luttinger-Kohn $\vec{k}\cdot\vec{p}$ Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands.
Huang, Guang Yao +4 more
core +1 more source
Measurement and Modeling of Infrared Nonlinear Absorption Coefficients and Laser-induced Damage Thresholds in Ge and GaSb [PDF]
, 2010 Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 μm for the first time, to our knowledge ...
Bohn, M. A. +6 more
core +3 more sources
Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
Scientific Reports, 2017 The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and ...
Guozhao Zhang +10 more
doaj +1 more source
, 2016 We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure.
Dick, Kimberly A. +5 more
core +1 more source
Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy [PDF]
, 2013 As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements ...
A G Taboada +8 more
core +2 more sources
Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions
, 2007 We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions.
Erwin, S. C. +4 more
core +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Micromachines, 2023 This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material.
Michael J. Hall, Daryoosh Vashaee
doaj +1 more source
, 2002 We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG).
Furdyna, J. K. +6 more
core +1 more source
Atomic hydrogen cleaning of GaSb(001) surfaces [PDF]
, 1996 We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (
Bell, Gavin R. +1 more
core +1 more source